Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15599041Application Date: 2017-05-18
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Publication No.: US09990970B2Publication Date: 2018-06-05
- Inventor: Chang Hyun Kim , Min Chang Kim , Do Yun Lee , Jae Jin Lee , Hun Sam Jung
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2016-0006435 20160119
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C7/10 ; G11C11/4076 ; G11C8/18 ; G11C8/06 ; G11C8/12 ; G11C5/06 ; G11C8/10 ; G11C29/02 ; G11C11/419 ; G11C7/08
Abstract:
A semiconductor device may be provided. The semiconductor device may include a first chip and a second chip. The second chip may be configured to receive signals from the first chip to generate a latch address based on the received signals from the first chip.
Public/Granted literature
- US20170256294A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-09-07
Information query
