Invention Grant
- Patent Title: Methods for reading and operating memory device including efuse
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Application No.: US15492491Application Date: 2017-04-20
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Publication No.: US09991002B2Publication Date: 2018-06-05
- Inventor: Chen-Yi Huang , Jiaqi Yang , Cheng-Tai Huang
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201410369901 20140730
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C17/18 ; G11C17/16 ; G11C29/00

Abstract:
The present disclosure provides a memory. The memory includes an array of memory cells arranged as a plurality of rows by a plurality of columns. A memory cell is connected to at least one redundant memory cell in series in a same row for storing same data as the memory cell; and a column of memory cells correspond to at least one redundant column of redundant memory cells wherein each redundant memory cell in the at least one redundant column stores same data as the memory cell in a same row.
Public/Granted literature
- US20170221575A1 METHODS FOR READING AND OPERATING MEMORY DEVICE Public/Granted day:2017-08-03
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