A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a semiconductor substrate. The dielectric layer has a first recess. The method includes forming a first conductive material layer over an inner wall and a bottom of the first recess. The first conductive material layer is partially filled in the first recess. The method includes performing a reflow process to convert the first conductive material layer into a first conductive layer. The first conductive layer has a second recess in the first recess. The method includes performing an electroplating process or an electroless plating process to form a second conductive layer over the first conductive layer so as to fill the second recess.