Invention Grant
- Patent Title: Selective etching of amorphous silicon over epitaxial silicon
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Application No.: US15603076Application Date: 2017-05-23
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Publication No.: US09991129B1Publication Date: 2018-06-05
- Inventor: Geetika Bajaj , Prerna Sonthalia Goradia , Robert Jan Visser
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/3065 ; H01L29/165 ; H01L21/02 ; H01L21/3213 ; H01L23/29 ; H01L21/67
Abstract:
Systems and methods of etching a semiconductor substrate may include concurrent exposure of the semiconductor substrate to a chlorine-containing precursor and ultraviolet (UV) light. The semiconductor substrate may include exposed amorphous silicon. The semiconductor substrate may further include exposed crystalline silicon or underlying crystalline silicon. The methods may further include removing amorphous silicon faster than crystalline silicon.
Information query
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