Invention Grant
- Patent Title: FinFETs with non-merged epitaxial S/D extensions on a seed layer and having flat top surfaces
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Application No.: US14661590Application Date: 2015-03-18
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Publication No.: US09991255B2Publication Date: 2018-06-05
- Inventor: Hong He , Shogo Mochizuki , Chiahsun Tseng , Chun-Chen Yeh , Yunpeng Yin
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , Renesas Electronics Corporation
- Applicant Address: US NY Armonk JP Kanagawa
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,RENESAS ELECTRONICS CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: US NY Armonk JP Kanagawa
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/04 ; H01L29/06 ; H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L21/306 ; H01L21/8234 ; H01L29/08
Abstract:
Semiconductor devices having non-merged fin extensions. A semiconductor device includes fins formed in trenches in an insulator layer, each of the fins having a uniform crystal orientation and a fin cap in a source and drain region that extends vertically and laterally beyond the trench. The fin caps of the respective fins are separate from one another.
Public/Granted literature
- US20150206877A1 NON-MERGED EPITAXIALLY GROWN MOSFET DEVICES Public/Granted day:2015-07-23
Information query
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