Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US14968468Application Date: 2015-12-14
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Publication No.: US09991256B2Publication Date: 2018-06-05
- Inventor: Che-Cheng Chang , Po-Chi Wu , Chih-Han Lin , Horng-Huei Tseng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/06 ; H01L29/66 ; H01L21/8234
Abstract:
A method for manufacturing a semiconductor structure includes forming a plurality of dummy semiconductor fins on a substrate. The dummy semiconductor fins are adjacent to each other and are grouped into a plurality of fin groups. The dummy semiconductor fins of the fin groups are recessed one group at a time.
Public/Granted literature
- US20170170174A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-06-15
Information query
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