Invention Grant
- Patent Title: Dual active layer semiconductor device and method of manufacturing the same
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Application No.: US14642563Application Date: 2015-03-09
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Publication No.: US09991311B2Publication Date: 2018-06-05
- Inventor: Joseph T. Smith , Michael Marrs
- Applicant: Joseph T. Smith , Michael Marrs
- Applicant Address: US AZ Scottsdale
- Assignee: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY
- Current Assignee: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY
- Current Assignee Address: US AZ Scottsdale
- Agency: Bryan Cave Leighton Paisner LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/105 ; H01L31/0392 ; G01N23/04 ; H01L21/683 ; H01L29/66 ; H01L29/786 ; H05K1/03

Abstract:
Some embodiments include an imaging system. The imaging system includes an active matrix pixel array having a flexible substrate and a pixel. The pixel includes a transistor over the flexible substrate, and the transistor includes multiple active layers having a first active layer and a second active layer over the first active layer. Further, the active matrix pixel array also includes a photodiode over the transistor, and the photodiode includes an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Meanwhile, the imaging system also includes a flexible scintillator layer over the active matrix pixel array. Other embodiments of related systems and methods are also disclosed.
Public/Granted literature
- US20160260768A1 DUAL ACTIVE LAYER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-09-08
Information query
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