Invention Grant
- Patent Title: Method and structure for dual sheet resistance trimmable thin film resistors at same level
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Application No.: US15209696Application Date: 2016-07-13
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Publication No.: US09991329B2Publication Date: 2018-06-05
- Inventor: Christoph Andreas Othmar Dirnecker , Wolfgang Schwartz , Doug Weiser , Joel Martin Halbert , Joseph Anthony DeSantis , Karsten Jens Spinger
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/522 ; H01L23/528 ; H01L21/3205 ; H01L21/768 ; H01L21/3213 ; H01L21/027 ; H01L21/268
Abstract:
An integrated circuit includes a higher sheet resistance resistor and a lower sheet resistance resistor, disposed in a same level of dielectric layers of the integrated circuit. The higher sheet resistor has a body region and head regions in a higher sheet resistance layer. The lower sheet resistor has a body region and head regions in a lower sheet resistance layer, which is thicker than the higher sheet layer. The higher sheet resistor has an upper head layer contacting the higher sheet layer at each head region of the higher sheet layer. Each upper head layer has a same composition and thickness as the lower sheet layer of the lower sheet resistor. The lower sheet resistor is free of head layers over the lower sheet resistance layer.
Public/Granted literature
- US20180019297A1 METHOD AND STRUCTURE FOR DUAL SHEET RESISTANCE TRIMMABLE THIN FILM RESISTORS AT SAME LEVEL Public/Granted day:2018-01-18
Information query
IPC分类:
