Invention Grant
- Patent Title: Semiconductor device including tungsten gate and manufacturing method thereof
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Application No.: US15281296Application Date: 2016-09-30
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Publication No.: US09991362B2Publication Date: 2018-06-05
- Inventor: Yu-Sheng Wang , Chi-Cheng Hung , Chia-Ching Lee , Chung-Chiang Wu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/49 ; H01L21/285
Abstract:
In a method of manufacturing a tungsten layer by an atomic layer deposition, a seed layer on an underlying layer is formed on a substrate by supplying a boron containing gas and a dilute gas, and a tungsten layer is formed on the seed layer by supplying a tungsten containing gas. A flow ratio of a flow amount of the boron containing gas to a total flow amount of the boron containing gas and the dilute gas is in a range from 1/21 to 1/4.
Public/Granted literature
- US20180097084A1 SEMICONDUCTOR DEVICE INCLUDING TUNGSTEN GATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-04-05
Information query
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