Invention Grant
- Patent Title: Semiconductor light emitting element
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Application No.: US15011950Application Date: 2016-02-01
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Publication No.: US09991418B2Publication Date: 2018-06-05
- Inventor: Hironori Yamasaki , Katsuyoshi Furuki , Yukie Nishikawa
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: White & Case LLP
- Priority: JP2010-276839 20101213
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L33/16 ; H01L33/22

Abstract:
According to one embodiment, a semiconductor light emitting element includes a light emitting layer, a current spreading layer of a first conductivity type, and a pad electrode. The light emitting layer is capable of emitting light. The current spreading layer has a first surface and a second surface. The light emitting layer is disposed on a side of the first surface. A light extraction surface having convex structures of triangle cross-sectional shape and a flat surface which is a crystal growth plane are included in the second surface. The pad electrode is provided on the flat surface. One base angle of the convex structure is 90 degrees or more.
Public/Granted literature
- US20160149081A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT Public/Granted day:2016-05-26
Information query
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