Invention Grant
- Patent Title: Semiconductor device with metal-bonded heat dissipator and manufacturing method for the same
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Application No.: US14976702Application Date: 2015-12-21
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Publication No.: US09991434B2Publication Date: 2018-06-05
- Inventor: Masatsugu Ichikawa , Satoshi Shichijo , Takehito Shimatsu
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2014-263577 20141225
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L27/15 ; H01L33/64 ; H01L21/00 ; H01L23/00 ; C04B37/00 ; H01L23/373

Abstract:
A semiconductor device includes an insulating substrate,a semiconductor element disposed on an upper surface of the substrate, a heat dissipation member, and a metal bonding layer that bonds the lower surface of the substrate to the upper surface of the heat dissipation member, and the area of the upper surface of the heat dissipation member is larger than the area of the lower surface of the substrate, and the metal bonding layer contacts the whole of the lower surface of the substrate and has an area larger than the area of the lower surface of the substrate, and the heat conductivity of the metal bonding layer is higher than the heat conductivity of the heat dissipation member.
Public/Granted literature
- US20160190417A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME Public/Granted day:2016-06-30
Information query
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