Invention Grant
- Patent Title: Semiconductor laser device and method of manufacturing the semiconductor laser device
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Application No.: US14931208Application Date: 2015-11-03
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Publication No.: US09991666B2Publication Date: 2018-06-05
- Inventor: Daisuke Morita
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2015-063673 20150326
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S3/10 ; H01S5/02 ; H01S5/20 ; H01S5/12 ; H01S5/22
Abstract:
A semiconductor laser device includes a substrate, a buffer layer provided on an upper surface of the substrate and formed of InP, a laser element having a ridge structure formed above the buffer layer, and an epi intermediate layer formed of a compound semiconductor containing As and exposed to the outside.
Public/Granted literature
- US20160285238A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR LASER DEVICE Public/Granted day:2016-09-29
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