Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15427178Application Date: 2017-02-08
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Publication No.: US09991855B2Publication Date: 2018-06-05
- Inventor: Masakazu Mizokami
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-183302 20140909
- Main IPC: H04M1/00
- IPC: H04M1/00 ; H03F3/19 ; H03F1/56 ; H03F3/21 ; H03F3/72 ; H04B1/16

Abstract:
In a semiconductor device, received signals of different frequency bands are input selectively to low noise amplifiers. A plurality of primary inductors are coupled between differential output nodes of the respective low noise amplifiers. A secondary inductor is provided commonly for the primary inductors, and magnetically coupled to the primary inductors. A demodulator converts a received signal transmitted from one of the primary inductors to the secondary inductor by electromagnetic induction, into a signal of a low frequency.
Public/Granted literature
- US20170149393A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-05-25
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