Invention Application
WO2008045230A2 CONTACT ELECTRODE FOR MICRODEVICES AND ETCH METHOD OF MANUFACTURE
审中-公开
MICRODEVICES的接触电极和蚀刻制造方法
- Patent Title: CONTACT ELECTRODE FOR MICRODEVICES AND ETCH METHOD OF MANUFACTURE
- Patent Title (中): MICRODEVICES的接触电极和蚀刻制造方法
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Application No.: PCT/US2007021113Application Date: 2007-10-02
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Publication No.: WO2008045230A2Publication Date: 2008-04-17
- Inventor: PARANJPYE ALOK , THOMPSON DOUGLAS L
- Applicant: INNOVATIVE MICRO TECHNOLOGY , PARANJPYE ALOK , THOMPSON DOUGLAS L
- Assignee: INNOVATIVE MICRO TECHNOLOGY,PARANJPYE ALOK,THOMPSON DOUGLAS L
- Current Assignee: INNOVATIVE MICRO TECHNOLOGY,PARANJPYE ALOK,THOMPSON DOUGLAS L
- Priority: US54628806 2006-10-12
- Main IPC: H01H1/06
- IPC: H01H1/06
Abstract:
A contact electrode for a device is made using an etching process to etch the surface of the contact electrode to form a corrugated contact surface wherein the outer edges of at least one grain is recessed from the outer edges of adjecent grains and is recessed by at least about 0.05 µm from the contact plane. By having such a corrugated surface, the contact electrode is likely to contact another conductor with at least one pure metal grain. This etching treatment reduces contact resistance and contact resistance variability throughout many cycles of use of the contact electrode.
Public/Granted literature
- WO2008045230A9 CONTACT ELECTRODE FOR MICRODEVICES AND ETCH METHOD OF MANUFACTURE Public/Granted day:2008-09-12
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