公开(公告)号：WO2010048139A3

公开(公告)日：2010-07-29

申请号：PCT/US2009061263

申请日：2009-10-20

Applicant: ADVANCED TECH MATERIALS ,  BARNES JEFFREY A ,  BENAC BRIAN ,  BOGGS KARL E ,  FENG LIN ,  LIU JUN ,  PETRUSKA MELISSA A ,  YAN XIAODONG ,  ZHANG PENG

Inventor： BARNES JEFFREY A ,  BENAC BRIAN ,  BOGGS KARL E ,  FENG LIN ,  LIU JUN ,  PETRUSKA MELISSA A ,  YAN XIAODONG ,  ZHANG PENG

IPC: C11D1/62

CPC classification number: C11D3/0073 ,  B08B3/08 ,  C11D1/72 ,  C11D3/042 ,  C11D3/2096 ,  C11D3/245 ,  C11D3/28 ,  C11D3/30 ,  C11D3/33 ,  C11D11/0047 ,  H01L21/02074

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract translation: 一种清洁组合物和方法，用于清洁来自其上具有所述残留物和污染物的微电子装置的化学机械抛光（CMP）残留物和污染物。 清洁组合物包含新颖的腐蚀抑制剂。 该组合物实现了对微电子器件表面上的CMP后残留物和污染物质的高效清洁，而不损害低k介电材料或铜互连材料。

公开(公告)号：WO2011072188A3

公开(公告)日：2011-09-15

申请号：PCT/US2010059800

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM ,  AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL

IPC: H01L21/3063

CPC classification number: H01L21/31133 ,  G03F7/423

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

Abstract translation: 提出了用于去除掩模材料（例如光致抗蚀剂）的方法以及通过去除掩模材料形成的电子器件。 例如，用于去除掩蔽材料的方法包括使掩蔽材料与包含铈和至少一种另外的氧化剂的溶液接触。 铈可以包含在盐中。 盐可以是硝酸铈铵。 该至少一种另外的氧化剂可以是锰，钌和/或含锇化合物。

公开(公告)号：WO2010088194A2

公开(公告)日：2010-08-05

申请号：PCT/US2010022050

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

IPC: C11D3/43 ,  C11D3/44

CPC classification number: C11D11/0041 ,  C11D1/66 ,  C11D1/667 ,  C11D1/825 ,  C11D3/2072 ,  C11D3/2093 ,  C11D3/43 ,  C11D11/0047 ,  G03F7/70341 ,  G03F7/70925

Abstract: Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.

Abstract translation: 使用所述组合物从表面除去聚合材料的组合物和方法，优选地从光刻设备清洗污染物积聚物，而无需完全拆卸所述设备。

公开(公告)号：WO2008095078A1

公开(公告)日：2008-08-07

申请号：PCT/US2008/052614

申请日：2008-01-31

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  BOGGS, Karl E. ,  GILES, Jeffrey ,  DARSILLO, Michael S. ,  PETRUSKA, Melissa A. ,  WRSCHKA, Peter

Inventor： BOGGS, Karl E. ,  GILES, Jeffrey ,  DARSILLO, Michael S. ,  PETRUSKA, Melissa A. ,  WRSCHKA, Peter

IPC: C09K3/14

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1463

Abstract: Chemical mechanical polishing (CMP) compositions and single CMP platen process for the removal of copper and barrier layer material from a microelectronic device substrate having same thereon. The process includes the in situ transformation of a copper removal CMP composition, which is used to selectively remove and planarize copper, into a barrier removal CMP composition, which is used to selectively remove barrier layer material, on a single CMP platen pad.

Abstract translation: 化学机械抛光（CMP）组合物和用于从其上具有其的微电子器件衬底去除铜和阻挡层材料的单CMP压板工艺。 该方法包括将铜移除CMP组合物原位转化，其用于在单个CMP压板衬垫上选择性地去除阻挡层材料的用于选择性地去除和平坦化铜的阻挡去除CMP组合物。

公开(公告)号：WO2011072188A2

公开(公告)日：2011-06-16

申请号：PCT/US2010/059800

申请日：2010-12-10

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  AFZALI-ARDAKANI, Ali ,  BAUM, Thomas H. ,  BOGGS, Karl E. ,  COOPER, Emanuel I. ,  CYWAR, Douglas ,  KERN, Matthew ,  KHOJASTEH, Mahmoud ,  NUNES, Ronald W. ,  TOTIR, George Gabriel

Inventor： AFZALI-ARDAKANI, Ali ,  BAUM, Thomas H. ,  BOGGS, Karl E. ,  COOPER, Emanuel I. ,  CYWAR, Douglas ,  KERN, Matthew ,  KHOJASTEH, Mahmoud ,  TOTIR, George Gabriel

IPC: H01L21/3063

CPC classification number: H01L21/31133 ,  G03F7/423

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

Abstract translation: 提出了去除掩模材料的方法，例如光致抗蚀剂，以及通过去除掩模材料形成的电子器件。 例如，用于去除掩模材料的方法包括使掩蔽材料与包含铈和至少一种另外的氧化剂的溶液接触。 铈可以包含在盐中。 盐可以是硝酸铈铵。 至少一种另外的氧化剂可以是锰，钌和/或含锇化合物。

公开(公告)号：WO2010088194A3

公开(公告)日：2010-11-25

申请号：PCT/US2010022050

申请日：2010-01-26

Applicant: ADVANCED TECH MATERIALS ,  CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

Inventor： CHEN TIANNIU ,  BILODEAU STEVEN ,  BOGGS KARL E ,  JIANG PING ,  KORZENSKI MICHAEL B ,  MIRTH GEORGE ,  VAN BERKEL KIM

IPC: C11D3/43 ,  C11D3/44

CPC classification number: C11D11/0041 ,  C11D1/66 ,  C11D1/667 ,  C11D1/825 ,  C11D3/2072 ,  C11D3/2093 ,  C11D3/43 ,  C11D11/0047 ,  G03F7/70341 ,  G03F7/70925

Abstract: Compositions and methods of using the said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of the said apparatus. The said compositions comprise at least one organic solvent and one non-ionic surfactant. Moreover, the pH of the said composition is about 5 to 9.

Abstract translation: 使用所述组合物从表面除去聚合物材料的组合物和方法，优选地从光刻设备清洗污染物积聚物，而无需完全拆卸所述设备。 所述组合物包含至少一种有机溶剂和一种非离子表面活性剂。 此外，所述组合物的pH为约5至9。

公开(公告)号：WO2010088194A9

公开(公告)日：2010-08-05

申请号：PCT/US2010/022050

申请日：2010-01-26

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  CHEN, Tianniu ,  BILODEAU, Steven ,  BOGGS, Karl E. ,  JIANG, Ping ,  KORZENSKI, Michael B. ,  MIRTH, George ,  VAN BERKEL, Kim

Inventor： CHEN, Tianniu ,  BILODEAU, Steven ,  BOGGS, Karl E. ,  JIANG, Ping ,  KORZENSKI, Michael B. ,  MIRTH, George ,  VAN BERKEL, Kim

IPC: C11D3/43 ,  C11D3/44

Abstract: Compositions and methods of using the said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of the said apparatus. The said compositions comprise at least one organic solvent and one non-ionic surfactant. Moreover, the pH of the said composition is about 5 to 9.

公开(公告)号：WO2010048139A2

公开(公告)日：2010-04-29

申请号：PCT/US2009/061263

申请日：2009-10-20

Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. ,  BARNES, Jeffrey, A. ,  BENAC, Brian ,  BOGGS, Karl, E. ,  FENG, Lin ,  LIU, Jun ,  PETRUSKA, Melissa, A. ,  YAN, Xiaodong ,  ZHANG, Peng

Inventor： BARNES, Jeffrey, A. ,  BENAC, Brian ,  BOGGS, Karl, E. ,  FENG, Lin ,  LIU, Jun ,  PETRUSKA, Melissa, A. ,  YAN, Xiaodong ,  ZHANG, Peng

IPC: C11D1/62

CPC classification number: C11D3/0073 ,  B08B3/08 ,  C11D1/72 ,  C11D3/042 ,  C11D3/2096 ,  C11D3/245 ,  C11D3/28 ,  C11D3/30 ,  C11D3/33 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/329 ,  C11D11/0047 ,  C23G1/20 ,  H01L21/02074

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract translation: 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物包括新的腐蚀抑制剂。 该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。