公开(公告)号：US20180071719A1

公开(公告)日：2018-03-15

申请号：US15552203

申请日：2016-02-19

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Katsutoshi NAGAOKA ,  Kazuya IMAMURA ,  Katsutoshi SATO

IPC: B01J23/46 ,  B01J23/10 ,  B01J35/00 ,  B01J37/02 ,  B01J37/08 ,  C01C1/04

CPC classification number: B01J23/462 ,  B01J23/10 ,  B01J23/63 ,  B01J35/0006 ,  B01J35/002 ,  B01J35/0046 ,  B01J35/006 ,  B01J35/008 ,  B01J37/0221 ,  B01J37/0225 ,  B01J37/031 ,  B01J37/086 ,  B01J37/088 ,  B01J37/18 ,  C01C1/04 ,  C01C1/0411 ,  C01F17/0043 ,  C01P2002/85 ,  C01P2004/03 ,  Y02P20/52

Abstract: The present invention provides a rare earth oxide-supported noble metal catalyst which has a high catalytic activity, is greatly improved in the ammonia production activity per weight of the catalyst and per amount of the supported metal, and enables the synthesis of ammonia under mild conditions. The catalyst according to the present invention is characterized in that ruthenium is supported in a layered form on a praseodymium oxide carrier. The catalyst according to the present invention can be produced by burning a praseodymium oxide precursor at a lower temperature, then at a medium temperature and then at a higher temperature to produce praseodymium oxide, then agitating the resultant praseodymium oxide together with a ruthenium supply source in a solvent, then removing the solvent from the mixture, and then burning the resultant product.

公开(公告)号：WO2008051589A2

公开(公告)日：2008-05-02

申请号：PCT/US2007/022607

申请日：2007-10-25

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  HASHIMOTO, Tadao

Inventor： HASHIMOTO, Tadao

IPC: C01B21/06 ,  C30B7/00 ,  C30B7/10

CPC classification number: C30B29/403 ,  C30B7/105

Abstract: A method of growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and the group-III crystals grown by this method. The group III-nitride crystal is grown in a reaction vessel in supercritical ammonia using a source material or nutrient that is polycrystalline group III-nitride, amorphous group III-nitride, group-III metal or a mixture of the above, and a seed crystal that is a group-III nitride single crystal. In order to grow high-quality group III-nitride crystals, the crystallization temperature is set at 550 °C or higher. Theoretical calculations show that dissociation of NH 3 at this temperature is significant. However, the dissociation of NH 3 is avoided by adding extra N 2 pressure after filling the reaction vessel with NH 3 .

Abstract translation: 在超临界氨和氮的混合物中生长III族氮化物晶体的方法以及通过该方法生长的III族晶体。 III族氮化物晶体在反应容器中在超临界氨中使用多晶III族氮化物，无定形III族氮化物，III族金属或上述物质的混合物的源材料或营养物和种晶 那是一种III族氮化物单晶。 为了生长高质量的III族氮化物晶体，结晶温度设定在550℃或更高。 理论计算表明，NH 3在此温度下的解离是显着的。 然而，在用NH 3填充反应容器后，通过加入额外的N 2压力来避免NH 3的解离。

公开(公告)号：WO2006113443A3

公开(公告)日：2006-10-26

申请号：PCT/US2006/014084

申请日：2006-04-13

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  SPECK, James S. ,  HASKELL, Benjamin A ,  PATTISON, P. Morgan ,  BAKER, Troy J

Inventor： SPECK, James S. ,  HASKELL, Benjamin A ,  PATTISON, P. Morgan ,  BAKER, Troy J

IPC: B44C1/22 ,  C03C15/00

Abstract: An etching technique for the fabrication of thin (Al, In, Ga)N layers. A suitable template or substrate is selected and implanted with foreign ions over a desired area to create ion implanted material. A regrowth of a device structure is then performed on the implanted template or substrate. The top growth surface of the template is bonded to a carrier wafer to created a bonded template/carrier wafer structure. The substrate is removed, as is any residual material, to expose the ion implanted material. The ion implanted material on the bonded template/carrier wafer structure is then exposed to a suitable etchant for a sufficient time to remove the ion implanted material.

公开(公告)号：WO2020028453A1

公开(公告)日：2020-02-06

申请号：PCT/US2019/044266

申请日：2019-07-31

Applicant: THE UNIVERSITY OF TOKYO ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY

Inventor： LELEU, Timothee, Guillaume ,  AIHARA, Kazuyuki ,  YAMAMOTO, Yoshihisa ,  MCMAHON, Peter

IPC: G06N10/00 ,  G02F3/00 ,  G06F11/30 ,  G06F15/173

Abstract: A data processing apparatus is configured to solve a specific problem using a simple hardware. The data processing apparatus comprises a state data processing unit configured to iterate update of state data by a predetermined time evolutional process, a cost evaluation unit configured to evaluate a cost function for current state data, and an error calculation unit configured to calculate error values relating to amplitude homogeneity of the current state data, wherein the state data processing unit performs the time evolutional process on the state data to update the current state data based on the cost function and the error values which are calculated by the error calculation unit.

公开(公告)号：WO2008069349A1

公开(公告)日：2008-06-12

申请号：PCT/JP2007/074067

申请日：2007-12-06

Applicant: SAPPORO MEDICAL UNIVERSITY ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  TORIGOE, Toshihiko ,  SATO, Noriyuki ,  ASANUMA, Hiroko ,  FUJII, Nobuhiro ,  ISHINO, Masaho

Inventor： TORIGOE, Toshihiko ,  SATO, Noriyuki ,  ASANUMA, Hiroko ,  FUJII, Nobuhiro ,  ISHINO, Masaho

IPC: A61K31/19 ,  C07C53/128 ,  A61P31/00

CPC classification number: A61K31/19 ,  G01N33/6893 ,  G01N2333/70539 ,  G01N2333/916 ,  Y02A50/463

Abstract: [Technical Problem] The present invention provides an enhancer of cellular immunity, and provides applications to carcinogenesis or preventive therapy against cancer reccurrence, immunotherapy for cancer, treatment for pathogenic microorganism infection, and the like. [Technical Solution] The present invention comprises the substance having an inhibitory activity of histone deacetylase (HDAC) as an active component.

Abstract translation: 技术问题本发明提供了细胞免疫的增强剂，并且提供了癌症复发，癌症免疫治疗，病原微生物感染治疗等的癌发生或预防疗法的应用。 技术方案本发明包含具有组蛋白脱乙酰酶（HDAC）作为活性成分的抑制活性的物质。

公开(公告)号：WO2006057454A1

公开(公告)日：2006-06-01

申请号：PCT/JP2005/022221

申请日：2005-11-25

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  JAPAN AS REPRESENTED BY DIRECTOR GENERAL OF NATIONAL INSTITUTE OF INFECTIOUS DISEASES ,  DEPARTEMENT OF MEDICAL SCIENCES, MINISTRY OF PUBLIC HEALTH, THAILAMD ,  HONDA, Mitsuo ,  MATSUO, Kazuhiro ,  HAMANO, Takaichi ,  IZUMI, Yasuyuki ,  PROMKHATKAEW, Duanthanorm ,  BALACHANDRA, Kruavon ,  SUTTHENT, Ruengpung

Inventor： HONDA, Mitsuo ,  MATSUO, Kazuhiro ,  HAMANO, Takaichi ,  IZUMI, Yasuyuki ,  PROMKHATKAEW, Duanthanorm ,  BALACHANDRA, Kruavon ,  SUTTHENT, Ruengpung

IPC: C12N15/48 ,  A61K39/00 ,  A61K39/21 ,  A61P31/18 ,  C07K14/16 ,  C07K16/10

CPC classification number: C12N15/86 ,  A61K2039/523 ,  A61K2039/545 ,  C07K14/005 ,  C07K16/1054 ,  C12N2710/24143 ,  C12N2740/16122 ,  C12N2740/16134

Abstract: As a novel means for effective prevention from HIV-1 CEF01_AE infection, the present invention provide a method of prime-boost vaccination comprising a priming step by a recombinant BCG vaccine and one or more boosting steps by a recombinant vaccine, wherein both of the recombinant BCG vaccine for priming step and the recombinant vaccine for boosting steps have at least one gene of HIV- 1 CRFO 1_AE strain.

Abstract translation: 作为有效预防HIV-1 CEF01_AE感染的新手段，本发明提供了一种初次加强免疫接种的方法，其包括重组BCG疫苗的引发步骤和通过重组疫苗的一个或多个加强步骤，其中两个重组 用于引发步骤的BCG疫苗和用于增强步骤的重组疫苗具有至少一种HIV-1 CRFO 1_AE菌株的基因。

公开(公告)号：WO2005072868A1

公开(公告)日：2005-08-11

申请号：PCT/US2005/000306

申请日：2005-01-05

Applicant: UNIVERSITY OF CHICAGO ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  YAMAMOTO, Hisashi ,  BASAK, Arindrajit ,  ZHANG, Wei

Inventor： YAMAMOTO, Hisashi ,  BASAK, Arindrajit ,  ZHANG, Wei

IPC: B01J31/18

CPC classification number: C07D303/14 ,  B01J31/006 ,  B01J31/0201 ,  B01J31/2213 ,  B01J31/2226 ,  B01J31/2234 ,  B01J2231/70 ,  B01J2231/72 ,  B01J2531/0266 ,  B01J2531/56 ,  B01J2531/64 ,  B01J2540/34 ,  C07D301/14

Abstract: The present invention relates to the synthesis of chiral epoxides via a catalytic asymmetric oxidation of olefins. Additionally, the methodology provides a method of asymmetrically oxidizing sulfides and phosphines. This asymmetric oxidation employs a catalyst system composed of a metal and a chiral bishydroxamic acid ligand, which, in the presence of a stoichiometric oxidation reagent, serves to asymmetrically oxidize a variety of substrates.

Abstract translation: 本发明涉及通过烯烃的催化不对称氧化合成手性环氧化物。 另外，该方法提供了一种不对称氧化硫化物和膦的方法。 这种不对称氧化采用由金属和手性双硅氧酸配体组成的催化剂体系，其在化学计量氧化试剂的存在下用于不对称地氧化各种底物。

公开(公告)号：WO2005021526A2

公开(公告)日：2005-03-10

申请号：PCT/JP2004/012866

申请日：2004-08-30

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  OKAMOTO, Yoshiyuki ,  KOIKE, Yasuhiro

Inventor： OKAMOTO, Yoshiyuki ,  KOIKE, Yasuhiro

IPC: C07D317/06

CPC classification number: C07D317/42 ,  C07D317/44 ,  C07D317/46

Abstract: A production method of fluorinated compounds, for producing a compound represented by formula (3) in a fluorine-based solution in a flow of fluorine gas after reaction of at least one type of compounds represented by formula (1) and at least one type of compounds represented by formula (2). Similarly, fluorinated compounds represented by formula (4) prepared by the fluorination of compounds obtained by the reaction of formula (1) and formula (2)'. The fluorinated polymers obtained by the polymerizations of formula (3) and (4) compounds are useful as an optical or electrical materials.

Abstract translation: 一种含氟化合物的制备方法，用于在由式（1）表示的至少一种类型的化合物与至少一种类型的化合物反应之后的氟气流中的氟基溶液中制备由式（3）表示的化合物 由式（2）表示的化合物。 类似地，通过氟化通过式（1）和式（2）'的反应获得的化合物氟化制备的由式（4）表示的氟化化合物。 通过式（3）和（4）化合物的聚合获得的氟化聚合物可用作光学或电气材料。

公开(公告)号：WO2020027785A1

公开(公告)日：2020-02-06

申请号：PCT/US2018/044469

申请日：2018-07-31

Applicant: THE UNIVERSITY OF TOKYO ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY

Inventor： LELEU, Timothee Guilaume ,  AIHARA, Kazuyuki ,  MCMAHON, Peter ,  YAMAMOTO, Yoshihisa

IPC: G05B13/00

Abstract: A data processing apparatus is configured to solve a specific problem using a simple hardware. The data processing apparatus comprises a state data processing unit configured to iterate update of state data by a predetermined time evolutional process, a cost evaluation, unit configured to evaluate a cost function for current state data, and an error calculation unit configured to calculate error values relating to amplitude homogeneity of the current state data, wherein the state data processing unit performs the time evolutional process on the state data to update the current state data based on the cost function and the error values which are calculated by the error calculation unit.

公开(公告)号：WO2007117689A3

公开(公告)日：2007-10-18

申请号：PCT/US2007/008743

申请日：2007-04-06

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  HASHIMOTO, Tadao ,  NAKAMURA, Shuji ,  SAITO, Makoto

Inventor： HASHIMOTO, Tadao ,  NAKAMURA, Shuji ,  SAITO, Makoto

IPC: C30B25/12 ,  C30B25/14

Abstract: A method for growing gallium nitride (GaN) crystals in supercritical ammonia using an autoclave is disclosed. Large surface area GaN crystals are created, which may include calcium, magnesium or vanadium or less than 1% indium.