公开(公告)号：WO2011008359A2

公开(公告)日：2011-01-20

申请号：PCT/US2010/037149

申请日：2010-06-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  JOSEPH, Alvin, J. ,  MALLADI, Ramana, M. ,  SLINKMAN, James, A.

Inventor： JOSEPH, Alvin, J. ,  MALLADI, Ramana, M. ,  SLINKMAN, James, A.

IPC: H01L21/331 ,  H01L29/73

CPC classification number: H01L29/66272 ,  G06F17/5009 ,  G06F17/5036 ,  G06F17/5068 ,  G06F2217/12 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/31111 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/76232 ,  H01L21/8249 ,  H01L27/0207 ,  H01L29/7322 ,  Y02P90/265

Abstract: Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor (240 of FIG. 18); scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor (245); determining if stress compensation of the scaled design of the bipolar transistor is required based on dimensions of an emitter of the bipolar transistor after the scaling (250); and if stress compensation of the scaled design of the bipolar transistor is required then adjusting a layout of a trench isolation layout level of the scaled design relative to a layout of an emitter layout level of the scaled design (255) to generate a stress compensated scaled design of the bipolar transistor (260).

Abstract translation: 双极晶体管结构，设计和制造双极晶体管的方法，设计具有双极晶体管的电路的方法。 设计双极晶体管的方法包括：选择双极晶体管（图18的240）的初始设计; 缩放双极晶体管的初始设计以生成双极晶体管（245）的缩放设计; 基于所述缩放之后所述双极晶体管的发射极的尺寸来确定是否需要所述双极晶体管的缩放设计的应力补偿（250）; 并且如果需要双极晶体管的按比例缩放设计的压力补偿，则调节缩放设计的沟槽隔离布局水平相对于按比例缩放设计（255）的发射器布局水平的布局的布局以生成按比例缩放的应力补偿 双极晶体管（260）的设计。

公开(公告)号：WO2011008359A3

公开(公告)日：2011-03-10

申请号：PCT/US2010037149

申请日：2010-06-03

Applicant: IBM ,  JOSEPH ALVIN J ,  MALLADI RAMANA M ,  SLINKMAN JAMES A

Inventor： JOSEPH ALVIN J ,  MALLADI RAMANA M ,  SLINKMAN JAMES A

IPC: H01L21/331 ,  H01L29/73

CPC classification number: H01L29/66272 ,  G06F17/5009 ,  G06F17/5036 ,  G06F17/5068 ,  G06F2217/12 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/31111 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/76232 ,  H01L21/8249 ,  H01L27/0207 ,  H01L29/7322 ,  Y02P90/265

Abstract: Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor (240 of FIG. 18); scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor (245); determining if stress compensation of the scaled design of the bipolar transistor is required based on dimensions of an emitter of the bipolar transistor after the scaling (250); and if stress compensation of the scaled design of the bipolar transistor is required then adjusting a layout of a trench isolation layout level of the scaled design relative to a layout of an emitter layout level of the scaled design (255) to generate a stress compensated scaled design of the bipolar transistor (260).

Abstract translation: 双极晶体管结构，双极晶体管的设计和制造方法，设计具有双极晶体管的电路的方法。 设计双极晶体管的方法包括：选择双极晶体管（图18的240）的初始设计; 缩放双极晶体管的初始设计以产生双极晶体管（245）的缩放设计; 确定在缩放之后双极晶体管的发射极的尺寸（250）是否需要双极晶体管的缩放设计的应力补偿; 并且如果需要对双极晶体管的缩放设计的应力补偿，则调整缩放设计的沟槽隔离布局级别相对于缩放设计（255）的发射器布局级别的布局的布局，以产生应力补偿缩放 双极晶体管（260）的设计。