公开(公告)号：WO2003031136A2

公开(公告)日：2003-04-17

申请号：PCT/US2002/032747

申请日：2002-10-11

Applicant: NANOTECTONICA, INC.

Inventor： BULTHAUP, Colin ,  SPINDT, Chris

IPC: B29C

CPC classification number: G03F7/0002 ,  B29C43/021 ,  B29C2043/023 ,  B41M1/24 ,  B41M3/006 ,  B81C1/0046 ,  B81C2201/036 ,  B82Y10/00 ,  B82Y40/00 ,  H01L51/0004

Abstract: The current invention is directed to a method of patterning a surface or layer in the fabrication of a micro-device. In accordance with a preferred embodiment of the invention, a first mask structure is formed by depositing a layer of a first material onto the surface or layer and embossing the layer with a micro-stamp structure. The layer is preferably embossed as a liquid, which is solidified or cured to form the first mask structure. The first mask structure can be used as an etch-stop mask which is removed in a subsequent processing step or, alternatively, the first mask structure can remain a functional layer of the micro-device. In further embodiments, unmasked regions of the surface or layer are chemically treated through the first mask structure and/or a second material is deposited onto the unmasked regions of the surface or layer through the first mask structure to form a second mask structure and/or a second functional layer of the micro-device.

Abstract translation: 本发明涉及在微型器件的制造中图案化表面或层的方法。 根据本发明的优选实施例，通过在表面或层上沉积第一材料层并用微型印模结构压印该层来形成第一掩模结构。 该层优选为液体压花，其被固化或固化以形成第一掩模结构。 第一掩模结构可以用作在后续处理步骤中去除的蚀刻停止掩模，或者替代地，第一掩模结构可以保留在微型器件的功能层。 在另外的实施例中，通过第一掩模结构化学处理表面或层的未掩蔽区域，和/或通过第一掩模结构将第二材料沉积到表面或层的未掩蔽区域上，以形成第二掩模结构和/或 微器件的第二功能层。