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公开(公告)号：US20220292276A1
公开(公告)日：2022-09-15
申请号：US17825954
申请日：2022-05-26
Applicant: Stratio, Inc. , Stratio , Korea Minting and Security Printing Corporation
Inventor： Jae Hyung LEE , Su Ryeo OH , Yeul NA , Se Jin PARK , Youngsik KIM , Wongyun CHOE , Il-hoon CHOI , Bomjoon SEO , Sunghyun JOO , Hwasup SHIN , Minsoo CHO
Abstract: A method performed at an electronic device with one or more processors and memory storing one or more programs includes receiving a plurality of images of a machine readable code. A respective image of the plurality of images corresponds to a distinct wavelength. The method also includes analyzing the respective image of the plurality of images to obtain a respective processed information; combining the respective processed information to obtain combined information; and providing the combined information to at least one program of the one or more programs stored in the memory for processing.
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公开(公告)号：US20160284589A1
公开(公告)日：2016-09-29
申请号：US15172063
申请日：2016-06-02
Applicant: Stratio , Stratio, Inc.
Inventor： Jae Hyung LEE , Wooshik Jung
CPC classification number: H01L21/76254 , H01L21/02002 , H01L21/02381 , H01L21/02529 , H01L21/02694 , H01L21/31 , H01L29/0649 , H01L29/1608 , H01L29/36
Abstract: Devices that include a layer of silicon carbide and methods for making such devices are disclosed. A method includes obtaining a first silicon carbide wafer implanted with protons; applying a first layer of spin-on-glass over the first silicon carbide wafer; obtaining a first semiconductor substrate; bonding (i) the first layer of spin-on-glass to (ii) the first semiconductor substrate; and heating the first silicon carbide wafer to initiate splitting of the first silicon carbide wafer so that a first layer of silicon carbide remains over the first semiconductor substrate. A semiconductor device includes a semiconductor substrate; a first layer of spin-on-glass positioned over the semiconductor substrate; a first layer of silicon carbide positioned over the first layer of spin-on-glass; a second layer of spin-on-glass positioned over the first layer of silicon carbide; and a second layer of silicon carbide positioned over the second layer of spin-on-glass.
Abstract translation: 公开了包括碳化硅层的装置和用于制造这种装置的方法。 一种方法包括获得植入质子的第一碳化硅晶片; 在第一碳化硅晶片上施加第一层旋涂玻璃; 获得第一半导体衬底; 将（i）第一层旋涂玻璃接合到（ii）第一半导体衬底; 以及加热所述第一碳化硅晶片以引发所述第一碳化硅晶片的分裂，使得第一碳化硅层保留在所述第一半导体衬底之上。 半导体器件包括半导体衬底; 位于半导体衬底上的第一层旋涂玻璃; 位于第一层旋涂玻璃上的第一层碳化硅; 位于第一层碳化硅上的第二层旋涂玻璃; 以及位于第二层旋涂玻璃上的第二层碳化硅。
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公开(公告)号：WO2016191371A1
公开(公告)日：2016-12-01
申请号：PCT/US2016/033783
申请日：2016-05-23
Applicant: STRATIO, INC. , STRATIO
Inventor： LEE, Jae Hyung , NA, Yeul , KIM, Youngsik , JUNG, Woo-shik
IPC: H01L21/02 , H01L21/308
CPC classification number: H01L21/3081 , H01L21/02057 , H01L21/02082 , H01L21/02636 , H01L21/30604
Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes, subsequent to forming the one or more protective layers over the first group of one or more semiconductor structures, etching at least the subset of the second group of the plurality of semiconductor structures.
Abstract translation: 一种用于去除在选择性外延生长工艺过程中形成的核的方法包括用一个或多个掩模层在衬底上外延生长第一组一个或多个半导体结构。 在一个或多个掩模层上形成第二组多个半导体结构。 该方法还包括在一个或多个半导体结构的第一组上形成一个或多个保护层。 多个半导体结构的第二组的至少一个子集从一个或多个保护层露出。 该方法还包括：在一个或多个半导体结构的第一组上形成一个或多个保护层之后，至少蚀刻多个半导体结构的第二组的子集。
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公开(公告)号：US20170195327A1
公开(公告)日：2017-07-06
申请号：US15468027
申请日：2017-03-23
Applicant: STRATIO, INC. , STRATIO
Inventor： Jae Hyung LEE , Youngsik Kim , Yeul Na , Wooshik Jung , Seema Bhattiprolu
CPC classification number: H04L63/0876 , G06F21/44 , H04L63/104 , H04W12/06 , H04W12/08
Abstract: A server system receives from a first electronic device a first device identifier and network information of the first electronic device; subsequent to receiving the first device identifier and the network information of the first electronic device, receives from a second electronic device a second device identifier and network information of the second electronic device; in response to receiving from the second electronic device the second device identifier and the network information of the second electronic device, determines whether the first device identifier is associated with the second device identifier; and, in accordance with a determination that the first device identifier is associated with the second device identifier, sends to the second electronic device the network information of the first electronic device and/or sends to the first electronic device the network information of the second electronic device.
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公开(公告)号：WO2017139008A1
公开(公告)日：2017-08-17
申请号：PCT/US2016/064585
申请日：2016-12-02
Applicant: STRATIO , STRATIO, INC.
Inventor： LEE, Jae Hyung , KANG, Juhyung , KIM, Youngsik , NA, Yeul , JUNG, Wooshik
CPC classification number: G01J1/42 , G01J1/16 , G01J1/44 , G01J3/0208 , G01J3/021 , G01J3/14 , G01J3/1838 , G01J3/2803 , G01J3/2823 , G01J5/024 , G01J5/10 , G01J2003/1861 , G01J2003/2826 , H01L27/1461 , H01L27/14616 , H01L27/14645 , H01L27/14649 , H01L27/14689
Abstract: An apparatus for analyzing visible and shortwave infrared light includes an input aperture for receiving light that includes a visible wavelength component and a shortwave infrared wavelength component; a first set of one or more lenses configured to relay light from the input aperture; one or more dispersive optical elements configured to disperse light from the first set of one or more lenses; a second set of one or more lenses configured to focus the dispersed light from the one or more dispersive optical elements; and an array detector configured for converting the light from the second set of one or more lenses to electrical signals that include electrical signals indicating intensity of the visible wavelength component and electrical signals indicating intensity of the shortwave infrared wavelength component.
Abstract translation: 一种用于分析可见光和短波红外光的装置包括：输入孔，用于接收包括可见光波长成分和短波红外波长成分的光; 第一组一个或多个透镜，其被配置为中继来自所述输入孔径的光; 一个或多个色散光学元件，其被配置为分散来自所述第一组一个或多个透镜的光; 第二组一个或多个透镜，其被配置为聚焦来自所述一个或多个色散光学元件的色散光; 以及阵列检测器，被配置用于将来自第二组一个或多个透镜的光转换为包括指示可见波长成分的强度的电信号和指示短波红外波长成分的强度的电信号的电信号。
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Patent Agency Ranking
公开(公告)号：JP2020109851A
公开(公告)日：2020-07-16
申请号：JP2020030636
申请日：2020-02-26
Applicant: ストレイティオ, インコーポレイテッド , STRATIO, INC. , ストレイティオ , STRATIO
IPC: H01L31/10 , H01L27/146
Abstract: 【課題】小さな暗電流、高い量子効率及び強いチャネル変調を有する光センサを提供する。 【解決手段】光を検知するデバイス100は、第1の型のドーパントを用いてドープされた第1の半導体領域104と、第2の型のドーパントを用いてドープされた第2の半導体領域106と、を含む。第2の半導体領域は、第1の半導体領域の上方に配置されている。デバイスは、ゲート絶縁層110と、ゲート112と、ソース114と、ドレイン116と、を含む。第2の半導体領域は、ゲート絶縁層のほうを向いて配置されている上面120と、第2の半導体領域の上面に対して反対側に配置されている底面122と、を有する。第2の半導体領域は、第2の半導体領域の上面を含む上側部分と124、上側部分とは相互に排他的であり第2の半導体領域の底面を含む下側部分126と、を有する。第1の半導体領域は、第2の半導体領域の上側部分及び下側部分の両方と接触している。 【選択図】図1A
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公开(公告)号：JP2016526790A
公开(公告)日：2016-09-05
申请号：JP2016521846
申请日：2014-06-20
IPC: H01L31/10 , H01L27/146
CPC classification number: H01L27/14649 , H01L27/14614 , H01L27/14616 , H01L27/14689 , H04N5/361
Abstract: 光を検知するためのデバイスは、第1の型のドーパントを用いてドープされた第1の半導体領域と、第2の型のドーパントを用いてドープされた第2の半導体領域と、を含む。第2の半導体領域は、第1の半導体領域の上方に配置されている。デバイスは、ゲート絶縁層と、ゲートと、ソースと、ドレインと、を含む。第2の半導体領域は、ゲート絶縁層のほうを向いて配置されている上面と、第2の半導体領域の上面に対して反対側に配置されている底面と、を有する。第2の半導体領域は、第2の半導体領域の上面を含む上側部分と、上側部分とは相互に排他的であり第2の半導体領域の底面を含む下側部分と、を有する。第1の半導体領域は、第2の半導体領域の上側部分及び下側部分の両方と接触している。
Abstract translation: 装置，用于检测光包括掺杂有第一掺杂物类型的第一半导体区域，以及掺杂有第二类型的掺杂剂，所述第二半导体区。 第二半导体区域被布置在第一半导体区域的上方。 装置包括栅极绝缘层，栅极，源极，一漏极，一。 所述第二半导体区具有布置面朝栅极绝缘层的上表面和底表面相对地设置到所述第二半导体区的上表面上。 所述第二半导体区具有包括所述第二半导体区的上表面，以及下部分到上部分，其包括专用和第二半导体区域的相互的底表面，所述的上部。 所述第一半导体区域与两个所述第二半导体区的上部分和下部分接触。
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公开(公告)号：WO2021108364A1
公开(公告)日：2021-06-03
申请号：PCT/US2020/061945
申请日：2020-11-24
Applicant: STRATIO , STRATIO, INC. , KOREA MINTING AND SECURITY PRINTING CORPORATION
Inventor： LEE, Jae, Hyung , OH, Su Ryeo , NA, Yeul , PARK, Se Jin , KIM, Youngsik , CHOE, Wongyun , CHOI, II-hoon , SEO, Bomjoon , JOO, Sunghyun , SHIN, Hwasup , CHO, Minsoo
IPC: G06K7/14
Abstract: A method performed at an electronic device with one or more processors and memory storing one or more programs includes receiving a plurality of images of a machine readable code. A respective image of the plurality of images corresponds to a distinct wavelength. The method also includes analyzing the respective image of the plurality of images to obtain a respective processed information; combining the respective processed information to obtain combined information; and providing the combined information to at least one program of the one or more programs stored in the memory for processing.
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公开(公告)号：WO2016049558A1
公开(公告)日：2016-03-31
申请号：PCT/US2015/052410
申请日：2015-09-25
Applicant: STRATIO , STRATIO, INC.
Inventor： LEE, Jae, Hyung , KIM, Youngsik , NA, Yeul , JUNG, Wooshik , BHATTIPROLU, Seema
IPC: H04L9/32
CPC classification number: H04L63/0876 , G06F21/44 , H04L63/104 , H04W12/06 , H04W12/08
Abstract: A server system receives from a first electronic device a first device identifier and network information of the first electronic device; subsequent to receiving the first device identifier and the network information of the first electronic device, receives from a second electronic device a second device identifier and network information of the second electronic device; in response to receiving from the second electronic device the second device identifier and the network information of the second electronic device, determines whether the first device identifier is associated with the second device identifier; and, in accordance with a determination that the first device identifier is associated with the second device identifier, sends to the second electronic device the network information of the first electronic device and/or sends to the first electronic device the network information of the second electronic device.
Abstract translation: 服务器系统从第一电子设备接收第一设备标识符和第一电子设备的网络信息; 在接收到第一设备标识符和第一电子设备的网络信息之后，从第二电子设备接收第二设备标识符和第二电子设备的网络信息; 响应于从所述第二电子设备接收到所述第二设备标识符和所述第二电子设备的网络信息，确定所述第一设备标识符是否与所述第二设备标识符相关联; 并且根据第一设备标识符与第二设备标识符相关联的确定，向第二电子设备发送第一电子设备的网络信息和/或向第一电子设备发送第二电子设备的网络信息 设备。
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公开(公告)号：WO2015084858A1
公开(公告)日：2015-06-11
申请号：PCT/US2014/068179
申请日：2014-12-02
Applicant: STRATIO , STRATIO, INC.
Inventor： LEE, Jae, Hyung , JUNG, Wooshik
IPC: H01L29/36
CPC classification number: H01L21/76254 , H01L21/02002 , H01L21/02381 , H01L21/02529 , H01L21/02694 , H01L21/31 , H01L29/0649 , H01L29/1608 , H01L29/36
Abstract: Devices that include a layer of silicon carbide and methods for making such devices are disclosed. A method includes obtaining a first silicon carbide wafer implanted with protons; applying a first layer of spin-on-glass over the first silicon carbide wafer; obtaining a first semiconductor substrate; bonding (i) the first layer of spin-on-glass to (ii) the first semiconductor substrate; and heating the first silicon carbide wafer to initiate splitting of the first silicon carbide wafer so that a first layer of silicon carbide remains over the first semiconductor substrate. A semiconductor device includes a semiconductor substrate; a first layer of spin-on-glass positioned over the semiconductor substrate; a first layer of silicon carbide positioned over the first layer of spin-on-glass; a second layer of spin-on-glass positioned over the first layer of silicon carbide; and a second layer of silicon carbide positioned over the second layer of spin-on-glass.
Abstract translation: 公开了包括碳化硅层的装置和用于制造这种装置的方法。 一种方法包括获得植入质子的第一碳化硅晶片; 在第一碳化硅晶片上施加第一层旋涂玻璃; 获得第一半导体衬底; 将（i）第一层旋涂玻璃接合到（ii）第一半导体衬底; 以及加热所述第一碳化硅晶片以引发所述第一碳化硅晶片的分裂，使得第一碳化硅层保留在所述第一半导体衬底之上。 半导体器件包括半导体衬底; 位于半导体衬底上的第一层旋涂玻璃; 位于第一层旋涂玻璃上的第一层碳化硅; 位于第一层碳化硅上的第二层旋涂玻璃; 以及位于第二层旋涂玻璃上的第二层碳化硅。
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