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Patent Agency Ranking
公开(公告)号：USRE42887E1
公开(公告)日：2011-11-01
申请号：US12548363
申请日：2009-08-26
Applicant: Mehran Mehregany , Christian A. Zorman , Xiao-An Fu , Jeremy Dunning
Inventor： Mehran Mehregany , Christian A. Zorman , Xiao-An Fu , Jeremy Dunning
IPC: C23C16/00
CPC classification number: C23C16/325
Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
Abstract translation: 公开了一种在衬底上沉积陶瓷膜，特别是碳化硅膜的方法，其中控制残余应力，残余应力梯度和电阻率。 还公开了具有具有这些受控特性的沉积膜和具有这些性质的器件的衬底，特别是MEMS和NEMS器件，具有具有这些性质的膜的衬底。
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公开(公告)号：US20050106320A1
公开(公告)日：2005-05-19
申请号：US10716006
申请日：2003-11-18
Applicant: Mehran Mehregany , Christian Zorman , Xiao-An Fu , Jeremy Dunning
Inventor： Mehran Mehregany , Christian Zorman , Xiao-An Fu , Jeremy Dunning
CPC classification number: C23C16/325
Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
Abstract translation: 公开了一种在衬底上沉积陶瓷膜，特别是碳化硅膜的方法，其中控制残余应力，残余应力梯度和电阻率。 还公开了具有具有这些受控特性的沉积膜和具有这些性质的器件的衬底，特别是MEMS和NEMS器件，具有具有这些性质的膜的衬底。
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公开(公告)号：US08153280B2
公开(公告)日：2012-04-10
申请号：US11736964
申请日：2007-04-18
Applicant: Mehran Mehregany , Christian A. Zorman , Xiao-An Fu , Jeremy L. Dunning
Inventor： Mehran Mehregany , Christian A. Zorman , Xiao-An Fu , Jeremy L. Dunning
IPC: B32B9/00
CPC classification number: C23C16/325
Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
Abstract translation: 公开了一种在衬底上沉积陶瓷膜，特别是碳化硅膜的方法，其中控制残余应力，残余应力梯度和电阻率。 还公开了具有具有这些受控特性的沉积膜和具有这些性质的器件的衬底，特别是MEMS和NEMS器件，具有具有这些性质的膜的衬底。
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公开(公告)号：US07261919B2
公开(公告)日：2007-08-28
申请号：US10716006
申请日：2003-11-18
Applicant: Mehran Mehregany , Christian A. Zorman , Xiao-An Fu , Jeremy L. Dunning
Inventor： Mehran Mehregany , Christian A. Zorman , Xiao-An Fu , Jeremy L. Dunning
IPC: C23C16/00
CPC classification number: C23C16/325
Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
Abstract translation: 公开了一种在衬底上沉积陶瓷膜，特别是碳化硅膜的方法，其中控制残余应力，残余应力梯度和电阻率。 还公开了具有具有这些受控特性的沉积膜和具有这些性质的器件的衬底，特别是MEMS和NEMS器件，具有具有这些性质的膜的衬底。
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公开(公告)号：US20110001143A1
公开(公告)日：2011-01-06
申请号：US11736964
申请日：2007-04-18
Applicant: Mehran Mehregany , Christian A. Zorman , Xiao-An Fu , Jeremy L. Dunning
Inventor： Mehran Mehregany , Christian A. Zorman , Xiao-An Fu , Jeremy L. Dunning
CPC classification number: C23C16/325
Abstract: A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
Abstract translation: 公开了一种在衬底上沉积陶瓷膜，特别是碳化硅膜的方法，其中控制残余应力，残余应力梯度和电阻率。 还公开了具有具有这些受控特性的沉积膜和具有这些性质的器件的衬底，特别是MEMS和NEMS器件，具有具有这些性质的膜的衬底。
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