公开(公告)号：KR1020130123110A

公开(公告)日：2013-11-12

申请号：KR1020120046276

申请日：2012-05-02

Applicant: 고려대학교 산학협력단

Inventor： 임대순 ,  신동희 ,  이동현 ,  이양복

IPC: H01L21/8247 ,  H01L27/115

CPC classification number: H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144

Abstract: The present invention relates to a manufacturing method for a phase-change memory device. The manufacturing method for a phase-change memory device comprises a substrate preparing step for preparing a semiconductor substrate on which a contact plug is formed on a lower electrode; an insulating film forming step for forming an insulating film on the semiconductor substrate with the contact plug; a phase-change film forming step for forming a phase-change film on the contact plug and the insulating film; a nitrogen doping step for doping the surface of the phase-change film with nitrogen; a polishing step for polishing the surface of the phase-change film on which the nitrogen is doped; and an electrode forming step for forming an upper electrode on the upper part of the phase-change film. According to the configuration, the manufacturing method for a phase-change memory device of the present invention performs a chemical or mechanical polishing process after doping the surface of a GST film with nitrogen, easily stabilizes the GST film consisting of different compounds, and improves the surface roughness of the GST film. [Reference numerals] (AA) Start;(BB) End;(S110) Prepare a semiconductor substrate on which a contact plug is formed on a lower electrode;(S120) Form an insulating film on the semiconductor substrate;(S130) Form a phase-change film on the contact plug and the insulating film;(S140) Dope the surface of the phase-change film with nitrogen;(S150) Polish the surface of the phase-change film on which the nitrogen is doped;(S160) Form an upper electrode on the upper part of the phase-change film

Abstract translation: 本发明涉及一种用于相变存储器件的制造方法。 相变存储器件的制造方法包括：准备在下电极上形成有接触插塞的半导体衬底的衬底准备步骤; 绝缘膜形成步骤，用于在所述半导体衬底上用所述接触插塞形成绝缘膜; 相变膜形成步骤，用于在接触插塞和绝缘膜上形成相变膜; 氮掺杂步骤，用于用氮掺杂相变膜的表面; 用于抛光其上掺杂有氮的相变膜的表面的抛光步骤; 以及在所述相变膜的上部形成上部电极的电极形成工序。 根据该结构，本发明的相变存储器件的制造方法在用氮掺杂GST膜的表面后进行化学或机械抛光工艺，容易稳定由不同化合物组成的GST膜，并且改善 GST膜的表面粗糙度。 （AA）开始;（BB）端;（S110）准备在下电极上形成有接触插塞的半导体衬底;（S120）在半导体衬底上形成绝缘膜;（S130）形成 接触塞和绝缘膜上的相变膜;（S140）用氮气对相变膜的表面进行掺杂;（S150）对掺杂有氮的相变膜的表面进行抛光;（S160） 在相变膜的上部形成上电极

公开(公告)号：KR1020130053004A

公开(公告)日：2013-05-23

申请号：KR1020110118433

申请日：2011-11-14

Applicant: 고려대학교 산학협력단

Inventor： 임대순 ,  신동희 ,  이동현 ,  이양복

IPC: H01L21/304 ,  H01L21/8247 ,  H01L27/115

CPC classification number: H01L21/30604

Abstract: PURPOSE: A chemical mechanical polishing method and a chemical mechanical polishing apparatus for a GST layer in a PRAM are provided to improve the surface roughness of the GST layer by controlling a polishing pad at a specific temperature without hydrogen peroxide. CONSTITUTION: A heating unit(140) controls the temperature of a polishing pad(120) between 30 and 38 degrees centigrade in a chemical mechanical polishing process. A slurry supply unit(170) injects slurry to the upper side of the polishing pad. The polishing pad polishes a GST layer on a holder. The temperature of the slurry is controlled between 30 and 38 degrees centigrade.

Abstract translation: 目的：提供一种用于PRAM中的GST层的化学机械抛光方法和化学机械抛光装置，以通过在不具有过氧化氢的情况下控制在特定温度下的抛光垫来改善GST层的表面粗糙度。 构成：加热单元（140）在化学机械抛光工艺中将抛光垫（120）的温度控制在30和38摄氏度之间。 浆料供给单元（170）将浆料注入到抛光垫的上侧。 抛光垫在支架上抛光GST层。 浆料的温度控制在30和38摄氏度之间。

公开(公告)号：KR1020140000496A

公开(公告)日：2014-01-03

申请号：KR1020120067580

申请日：2012-06-22

Applicant: 에스케이하이닉스 주식회사 ,  고려대학교 산학협력단

Inventor： 임대순 ,  양일호 ,  이승구 ,  신동희 ,  이동현 ,  이양복

IPC: C09K3/14 ,  H01L21/304

CPC classification number: C09G1/02 ,  B24B37/044

Abstract: The present invention relates to a polishing composition for chemical and mechanical polishing, a method for fabricating the same, and a chemical and mechanical polishing method using the polishing composition. The polishing composition according to an embodiment of the present invention comprises: nanodiamond particles as water based polishing compositions for flattening metal compound thin films which include two or more components of different kinds of metal atoms; and poly(sodium 4-styrenesulfonate) for dispersion stabilizing the nanodiamond particles. In the polishing composition, the nanodiamond particles have non-hydrophilic surfaces and PSS effectively stabilizes the same in order to suppress coagulation of the nanodiamond particles and to maintain enhanced dispersibility so that the polishing composition can obtain enhanced polishing properties for the metal compound thin films using the nanodiamond particles which are nano-scale superhard abrasives.

Abstract translation: 本发明涉及一种用于化学和机械抛光的抛光组合物，其制造方法和使用该抛光组合物的化学和机械抛光方法。 根据本发明实施方案的抛光组合物包括：纳米金刚石颗粒作为水性抛光组合物，用于使包含两种或更多种不同种类的金属原子的组分的金属化合物薄膜平坦化; 和用于分散稳定纳米金刚石颗粒的聚（4-苯乙烯磺酸钠）。 在抛光组合物中，纳米金刚石颗粒具有非亲水性表面，并且PSS有效地稳定其，以抑制纳米金刚石颗粒的凝结并保持增强的分散性，使得抛光组合物可以获得对于金属化合物薄膜的增强的抛光性能，所述金属化合物薄膜使用 纳米金刚石颗粒是纳米级超硬磨料。

公开(公告)号：KR101341807B1

公开(公告)日：2013-12-17

申请号：KR1020120046276

申请日：2012-05-02

Applicant: 고려대학교 산학협력단

Inventor： 임대순 ,  신동희 ,  이동현 ,  이양복

IPC: H01L21/8247 ,  H01L27/115

Abstract: 본발명은상변화메모리소자의제조방법에관한것으로, 보다구체적으로는하부전극상에콘택플러그가형성된반도체기판이준비되는기판준비단계; 상기콘택플러그를포함한상기반도체기판상에절연막을형성하는절연막형성단계; 상기콘택플러그및 절연막상에상변화막을형성하는상변화막형성단계; 상기상변화막의표면을질소로도핑하는질소도핑단계; 상기질소가도핑된상변화막의표면을연마하는연마단계; 및상기상변화막의상부에상부전극을형성하는전극형성단계;를포함한다. 이러한구성에의해, 본발명의상변화메모리소자의제조방법은 GST막의표면에질소를도핑한후, 화학적또는기계적연마공정을수행함으로써, 서로다른화합물로이루어진 GST막을용이하게평탄화하여 GST막의표면조도를향상시킬수 있는효과가있다.

公开(公告)号：KR1020130081599A

公开(公告)日：2013-07-17

申请号：KR1020120002668

申请日：2012-01-09

Applicant: 에스케이하이닉스 주식회사 ,  고려대학교 산학협력단

Inventor： 임대순 ,  신동희 ,  이동현 ,  양일호 ,  이양복

IPC: C09K3/14 ,  H01L21/304

CPC classification number: C09K13/00 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/3212

Abstract: PURPOSE: An abrasive composition including multicomponent-based metal elements applied to a nonvolatile memory device and performing an chemical mechanical polishing process that is economic and reliable, and a chemical and mechanical planarization method of a substrate having a surface on which a multicomponent-based metal compound thin film is formed are provided. CONSTITUTION: An abrasive composition is for planarization of a metal compound thin film including metal elements of two or more different types. The abrasive composition has abrasive particles and nano-scale particles having a particle size smaller than that of the abrasive particles and a polyhedral structure including a bond of silicon and oxygen. The abrasive particles includes one of alumina (AlOx), ceria (CeOx), zirconia (ZrOx), titania (TiOx), germania (GeOx), a chromium oxide (CrOx), and a manganese oxide (MnOx) and silica (SiOx) or a combination thereof. A size of the abrasive particles has an average size of 10 nm to 150 nm.

Abstract translation: 目的：一种包含应用于非易失性存储装置的多组分金属元素并进行经济可靠的化学机械抛光工艺的磨料组合物，以及具有表面的基材的化学和机械平面化方法，其中多组分基金属 提供复合薄膜。 构成：磨料组合物用于使包含两种或多种不同类型的金属元素的金属化合物薄膜平坦化。 研磨剂组合物具有研磨颗粒和粒径小于磨料颗粒的纳米尺度颗粒和包括硅和氧键的多面体结构。 研磨颗粒包括氧化铝（AlO x），二氧化铈（CeO x），氧化锆（ZrO x），二氧化钛（TiO x），氧化锗（GeO x），氧化铬（CrO x）和氧化锰（MnO x）和二氧化硅（SiO x） 或其组合。 研磨颗粒的尺寸具有10nm至150nm的平均尺寸。

公开(公告)号：KR101284553B1

公开(公告)日：2013-07-11

申请号：KR1020110118433

申请日：2011-11-14

Applicant: 고려대학교 산학협력단

Inventor： 임대순 ,  신동희 ,  이동현 ,  이양복

IPC: H01L21/304 ,  H01L21/8247 ,  H01L27/115

Abstract: 본 발명은 GST막의 화학적 기계적 연마 방법에 관한 것으로서, 가열 수단을 이용하여 화학적 기계적 연마 중에 연마 패드의 온도를 35 ℃이상 38 ℃이하로 조절하고, 연마 패드 상부에 슬러리를 주입한 다음, 연마 패드 상부에 위치한 홀더에 홀딩되어 있는 GST 막을 연마하는 것을 특징으로 하며, 산화제인 과산화수소를 사용하지 않으면서도 연마 패드를 특정 온도로 조절함으로써, GST막의 표면조도와 연마량을 향상시킬 수 있다.