公开(公告)号：KR1020120068347A

公开(公告)日：2012-06-27

申请号：KR1020100129935

申请日：2010-12-17

Applicant: 국민대학교산학협력단

Inventor： 민경식 ,  조관희

IPC: G11C7/10 ,  G11C7/12 ,  G11C5/14

CPC classification number: G11C7/1048 ,  G11C7/109 ,  G11C7/12 ,  G11C7/22 ,  G11C2207/2227 ,  H03K19/0175

Abstract: PURPOSE: A low power memristor driving circuit and a driving method thereof are provided to prevent a power loss by properly controlling an amount of currents. CONSTITUTION: A first low power driving control unit(200) generates a first internal write control signal of a memristor. A first operation signal applying unit applies a driving operation voltage to the first low power driving control unit. A first precharge unit(300) supplies a driving voltage of the memristor to the first low power driving control unit. A first write current applying unit(350) supplies a write current to the low power memristor driving circuit. An operating voltage applying unit(800) supplies an operation voltage to the low power memristor driving circuit.

Abstract translation: 目的：提供低功率忆阻器驱动电路及其驱动方法，以通过适当地控制电流量来防止功率损耗。 构成：第一低功率驱动控制单元（200）产生忆阻器的第一内部写入控制信号。 第一操作信号施加单元向第一低功率驱动控制单元施加驱动操作电压。 第一预充电单元（300）将忆阻器的驱动电压提供给第一低功率驱动控制单元。 第一写入电流施加单元（350）向低功率忆阻器驱动电路提供写入电流。 工作电压施加单元（800）向低功率忆阻器驱动电路提供工作电压。

公开(公告)号：KR101174800B1

公开(公告)日：2012-08-20

申请号：KR1020100129935

申请日：2010-12-17

Applicant: 국민대학교산학협력단

Inventor： 민경식 ,  조관희

IPC: G11C7/10 ,  G11C7/12 ,  G11C5/14

Abstract: 본발명은저전력멤리스터구동회로에관한것이다. 특히본 발명은데이터를쓰는동작에서저전력구동회로를통하여멤리스터에전류가흐르는구간을최소화시켜구동에필요한전류만흐르게하는저전력멤리스터구동회로에관한것이다.본발명은 '1'(high) 입력데이터에대응하는내부데이터신호를생성하는저전력멤리스터구동회로에있어서, 상기멤리스터의제1내부쓰기제어신호를생성하는제1저전력구동제어부, 상기제1저전력구동제어부에구동동작전압을인가하는제1동작신호인가부, 상기제1저전력구동제어부에상기멤리스터의구동전압을공급하는제1프리차지부, 저전력멤리스터구동회로에쓰기전류를공급하는제1쓰기전류인가부, 상기저전력멤리스터구동회로에동작전압을공급하는구동전압인가부, 상기제1내부쓰기제어신호에의하여상기내부데이터신호가생성되는것을특징으로한다.