公开(公告)号：KR1019940001323A

公开(公告)日：1994-01-19

申请号：KR1019920011004

申请日：1992-06-24

Applicant: 대한민국경북대학교센서기술연구소

Inventor： 대한민국경북대학교센서기술연구소

IPC: H01L21/20

公开(公告)号：KR1019950009616B1

公开(公告)日：1995-08-25

申请号：KR1019920011004

申请日：1992-06-24

Applicant: 대한민국경북대학교센서기술연구소

Inventor： 대한민국경북대학교센서기술연구소

IPC: H01L21/20

Abstract: forming a silicon oxide film(2,2') on a silicon substrate; forming a photoresist on the defined portion of the silicon oxide film(2); etching the silicon oxide film(2) using the photoresist as a mask; forming an n type silicon layer(4) in the sustrate(1); forming a porous silicon layer(5) of 1-6 micro meter depth in the substrate(1) by first step anodic reaction; and oxidizing the porous silicon layer(5) by putting the substrate(1) in boiling water and etching it; forming a porous silicon layer(5) in the substrate(1) by second step anodic reaction; oxidizing the porous silicon layer(5) by conventional oxidation process. The two step anodic reacton raises the porosity of the porous silicon layer, removes a cups, and reduce a stress of side direction.

Abstract translation: 在硅衬底上形成氧化硅膜（2,2'）; 在氧化硅膜（2）的限定部分上形成光致抗蚀剂; 使用光致抗蚀剂作为掩模蚀刻氧化硅膜（2）; 在所述胎面（1）中形成n型硅层（4）; 通过第一步阳极反应在衬底（1）中形成1-6微米深度的多孔硅层（5）; 以及通过将基板（1）放入沸水中并对其进行蚀刻来氧化多孔硅层（5）; 通过第二步阳极反应在衬底（1）中形成多孔硅层（5）; 通过常规氧化工艺氧化多孔硅层（5）。 两步阳极反应物提高多孔硅层的孔隙率，去除杯子，并减少侧面方向的应力。

公开(公告)号：KR100092495B1

公开(公告)日：1995-12-05

申请号：KR1019920011004

申请日：1992-06-24

Applicant: 대한민국경북대학교센서기술연구소

Inventor： 대한민국경북대학교센서기술연구소

IPC: H01L21/20