公开(公告)号：KR1020130043961A

公开(公告)日：2013-05-02

申请号：KR1020110108174

申请日：2011-10-21

Applicant: 아주대학교산학협력단

Inventor： 권오필 ,  최은영

IPC: C07C253/32 ,  C07C255/09 ,  C07B63/04

Abstract: PURPOSE: A crystal engineering method is provided to obtain pure polyene compound with high purity and enhanced optical properties. CONSTITUTION: A crystal engineering method which grows polyene compound while refining the same includes electron donors and electron acceptors represented by chemical formula 1 under the presence of an ionic additive in a solvent. Here, n is an integer of 1-4, R1 and R2 are respectively selected from H, D, -OH, an ester group, C1-4 alkyl group, -NH2, -NHR4, -NR5R6, a functional group of the chemical formula 1-a, perhalogenated, halogenated, or a non-halogenated aliphatic group, or an aromatic group, and R3 is -OH or C1-4 alkyl group, ester group, C1-4 alkoxy group, -NH2, -NHR7, -NR8R9 or a functional group of the chemical formula 1-b.

Abstract translation: 目的：提供一种晶体工程方法，以获得具有高纯度和增强光学性能的纯多烯化合物。 构成：在精制其中生长多烯化合物的晶体工程方法包括在溶剂中在离子添加剂存在下由化学式1表示的电子给体和电子受体。 这里，n为1-4的整数，R 1和R 2分别选自H，D，-OH，酯基，C 1-4烷基，-NH 2，-NHR 4，-NR 5 R 6，化学式的官能团 式1-a，全卤代，卤代或非卤代脂族基团或芳族基团，R 3是-OH或C 1-4烷基，酯基，C 1-4烷氧基，-NH 2，-NHR 7 - NR8R9或化学式1-b的官能团。

公开(公告)号：KR101102457B1

公开(公告)日：2012-01-05

申请号：KR1020090074345

申请日：2009-08-12

Applicant: 아주대학교산학협력단

Inventor： 권오필 ,  최은영

IPC: C07C253/30 ,  C07C255/32

Abstract: 본 발명은 전자 주게 및 전자 받게를 포함하는 폴리엔 화합물을 포함하는 결정의 성장 방법에 관한 것으로서, 상기 결정의 성장 방법은, 금속염 첨가제의 존재 하에서 상기 폴리엔 화합물을 포함하는 결정을 성장시키는 것을 포함하며, 이러한 결정 성장 방법에 의하여 상기 전자 주게 및 전자 받게를 포함하는 폴리엔 화합물을 포함하는 결정의 두께, 모폴로지 등을 포함한 결정 특성을 조절할 수 있다.
폴리엔, 결정 두께 조절, 첨가제, 금속염

公开(公告)号：KR1020110016712A

公开(公告)日：2011-02-18

申请号：KR1020090074345

申请日：2009-08-12

Applicant: 아주대학교산학협력단

Inventor： 권오필 ,  최은영

IPC: C07C253/30 ,  C07C255/32

Abstract: PURPOSE: A method for controlling growth characteristics of crystals is provided to obtain crystals containing polyene compounds with a thick thickness suitable as broadband THz generation sources. CONSTITUTION: A method for controlling growth characteristics of crystals comprises a step for growing polyene compounds including electron-donors represented by chemical formula 1 and electron-acceptors in the presence of metal salt additives in a solvent. In chemical formula 1, n is 1, 2, 3 or 4; R1 and R2 are selected from the group consisting of H, deuterium, -OH, ester group, C1~4 alkoxy group, -NH2, -NHR4, -NR5R6, and per-halogenated, halogenated or non-halogenated aliphatic group or aromatic group; and R3 is -OH, ester group, C1~4 alkoxy group, -NH2, -NHR7, and -NR8R9.

Abstract translation: 目的：提供一种控制晶体生长特性的方法，以获得具有适合作为宽带THz发生源的厚度的含有多烯化合物的晶体。 构成：用于控制晶体生长特性的方法包括在溶剂中在金属盐添加剂存在下生长包括由化学式1表示的电子给体的多烯化合物和电子受体的步骤。 化学式1中，n为1,2,3或4; R 1和R 2选自H，氘，-OH，酯基，C 1-4烷氧基，-NH 2，-NHR 4，-NR 5 R 6和全卤代，卤代或非卤代脂族基团或芳族基团 ; 并且R 3是-OH，酯基，C 1-4烷氧基，-NH 2，-NHR 7和-NR 8 R 9。

公开(公告)号：KR1020130072041A

公开(公告)日：2013-07-01

申请号：KR1020110139586

申请日：2011-12-21

Applicant: 아주대학교산학협력단

Inventor： 권오필 ,  최은영

IPC: C07C253/30 ,  C07C255/32 ,  C30B7/02

Abstract: PURPOSE: A growing method of a crystal of a polyene compound is provided to quickly form a polyene compound monocrystal within short time. CONSTITUTION: A crystal-growing method of a polyene compound comprises a step of growing crystal of a polyene compound including an electron donor and electron receptor represented by chemical formula 1, under the presence of inorganic acid additives. In chemical formula 1, n is an integer from 1-4; each of R1, R2, and R3 is selected from an aliphatic or aromatic group which can be functionalized by at least one functional group selected from H, D,-OH, ester, C1-4 alkyl group, -NH2, -NHR4, -NR5R6, a functional group of a chemical formula 1-a, hydroxy, ether, ester, amino, silyl, and siloxy; and m is an integer from 3-8.

Abstract translation: 目的：提供多烯化合物晶体的生长方法，以在短时间内快速形成多烯化合物单晶。 构成：多烯化合物的晶体生长方法包括在无机酸添加剂的存在下生长包含电子给体的多烯化合物和由化学式1表示的电子受体的晶体的步骤。 在化学式1中，n为1-4的整数; R 1，R 2和R 3各自选自可以被至少一个选自H，D，-OH，酯，C 1-4烷基，-NH 2，-NHR 4 - 的官能团官能化的脂族或芳族基团， NR5R6是化学式1-a，羟基，醚，酯，氨基，甲硅烷基和甲硅烷氧基的官能团; m为3-8的整数。

公开(公告)号：KR101373831B1

公开(公告)日：2014-03-17

申请号：KR1020110108174

申请日：2011-10-21

Applicant: 아주대학교산학협력단

Inventor： 권오필 ,  최은영

IPC: C07C253/32 ,  C07C255/09 ,  C07B63/04

Abstract: 본 발명은 전자 주개 및 전자 받개를 포함하는 폴리엔 화합물의 결정 성장 방법에 있어서, 불순물이 제거된 순수한 결정 성장 방법을 제공하는 것을 목적으로 한다.
본 발명에서 제시하는 결정 성장 방법에 의하여 광대역 THz 발생원으로서 적합한, 순수한 폴리엔 화합물을 포함하는 결정을 수득할 수 있다.