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公开(公告)号:KR100728178B1
公开(公告)日:2007-06-13
申请号:KR1020060006114
申请日:2006-01-20
Applicant: 한국교통대학교산학협력단
IPC: H01L35/14
Abstract: A method for producing Ba8Al16Si30 clathrate thermoelectric material is provided to improve thermoelectric properties comprising seeback coefficient or factor and electric conductivity by properly selecting annealing conditions. Ba element, Al element, and Si element are prepared as start material, and the start materials are blended to make a compound. The compound is arc-molten to produce Ba8Al16Si30. For homogenization of a phase and phase change, the molten material is annealed at the temperature of 700 deg.C. The annealing process is carried out during 5 hours.
Abstract translation: 提供一种制备Ba8Al16Si30包合物热电材料的方法,以通过适当选择退火条件来改善包括返回系数或因子和电导率的热电性质。 准备Ba元素,Al元素和Si元素作为起始材料,并将起始材料混合以制成化合物。 该化合物被电弧熔融以生产Ba8Al16Si30。 为了均匀化相和相变,将熔融材料在700℃的温度下退火。 退火过程在5小时内进行。
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公开(公告)号:KR100645596B1
公开(公告)日:2006-11-14
申请号:KR1020050078359
申请日:2005-08-25
Applicant: 한국교통대학교산학협력단
Abstract: A skutterudite CoSb3 thermoelectric material producing method is provided to improve the thermoelectric characteristic like a seebeck coefficient, electric conductivity, and thermoelectric power factor by producing skutterudite CoSb3 by an arc melting method and changing a microstructure by annealing the skutterudite CoSb3 under an optimal condition. The skutterudite CoSb3 thermoelectric material producing method comprises the steps of: arc-melting Co(Cobalt) and Sb(Stibium) elements under the atmosphere of Ar(Argon); executing re-melting more than one time to prevent the homogenization and segregation of a composition; and annealing the CoSb3 produced by an arc melting method. The CoSb3 is annealed at 300-500 deg.C. The CoSb3 has a microstructure without pores or cracks and good thermoelectric characteristic if the CoSb3 is annealed at 400 deg.C for 24 hours.
Abstract translation: 本发明提供一种方钴矿CoSb 3热电材料制造方法,通过电弧熔炼法制造方钴矿CoSb 3,并通过在最佳条件下对方钴矿CoSb 3进行退火来改变微结构,从而改善塞贝克系数,电导率和热电功率因数等热电特性。 该方钴矿CoSb 3热电材料的生产方法包括以下步骤:在Ar(氩)气氛下电弧熔炼Co(钴)和Sb(锑)元素; 重复熔融一次以上以防止组合物的均化和分离; 并对通过电弧熔融法制造的CoSb 3进行退火。 CoSb3在300-500℃退火。 如果CoSb3在400℃下退火24小时,CoSb3具有没有孔隙或裂纹的微结构和良好的热电特性。
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公开(公告)号:KR100677894B1
公开(公告)日:2007-02-05
申请号:KR1020050078360
申请日:2005-08-25
Applicant: 한국교통대학교산학협력단
Abstract: A process of fabricating a cobalt triantimonide(CoSb3) based thermoelectric material with Nb doping is provided to produce the material with improved thermoelectric properties including electric conductivity, thermoelectric factor and seeback coefficient by doping niobium to CoSb3 thermoelectric material and heat treating the doped material through annealing process. The process includes the steps of: preparing Co, Sb and Nb as starting materials in state of elements; forming Co(1-x)NbxSb3 wherein x ranges from 0.01 to 0.02 by mixing all of the starting materials and induction melting the mixture under Ar atmosphere; and annealing the molten material at 400deg.C to accomplish phase homogeneity and phase alteration thereof. By the suitable heat treatment after doping Nb element on CoSb3 thermoelectric material, the CoSb3 based thermoelectric material is produced with remarkably improved seeback coefficient, electric conductivity and thermoelectric factor.
Abstract translation: 提供了一种制造具有Nb掺杂的三锑基钴(CoSb 3)基热电材料的工艺,以通过将铌掺杂到CoSb 3热电材料并通过退火对掺杂材料进行热处理来生产具有改进的热电性质的材料,包括导电性,热电因子和返回系数 处理。 该方法包括以下步骤:以元素状态制备Co,Sb和Nb作为原料; 通过混合所有起始材料并在Ar气氛下感应熔融混合物,形成Co(1-x)Nb x Sb 3,其中x为0.01-0.02; 并在400℃下对熔融材料进行退火以实现其相位均匀性和相变。 通过在CoSb3热电材料上掺杂Nb元素后进行适当的热处理,制备了CoSb3基热电材料,其回归系数,导电率和热电因子显着提高。
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