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    유체의 이동을 온도에 의해 조절할 수 있는 다공질 실리콘박막의 제조 방법
    2.
    发明公开
    유체의 이동을 온도에 의해 조절할 수 있는 다공질 실리콘박막의 제조 방법 有权
    硅基水控制膜的制造方法

    公开(公告)号：KR1020080042774A

    公开(公告)日：2008-05-15

    申请号：KR1020080002486

    申请日：2008-01-09

    Applicant: 한국에너지기술연구원

    Inventor： 유상필 ,  박제균 ,  김창수 ,  이원용 ,  윤영기 ,  양태현 ,  박석희 ,  엄석기 ,  임성대 ,  박구곤 ,  김민진 ,  박진수 ,  조중원

    IPC: H01L21/20

    Abstract: A method of manufacturing a porous silicon thin film by controlling the movement of fluid according to temperature is provided to simultaneous introduce and discharge water and air through a pore by adjusting size of the pore according to the temperature of a surface of the thin film. A method of manufacturing a porous silicon thin film comprises the following steps of: forming a photo resist of a ring-shaped pattern on a surface of a silicon wafer; removing an upper photo resist by performing a DIRE process; forming a photo resist having a hole-shaped pattern on a bottom surface of the silicon wafer; forming a plurality of pores penetrating through the silicon wafer; removing the photo resist formed on bottom surface of the silicon wafer; coating an upper surface of the silicon wafer with a thermal transformation member; and removing the coated thermal transformation member through an exposure process while remaining only a ring-shaped thermal transformation structure around the pores.

    Abstract translation: 提供通过根据温度控制流体的移动来制造多孔硅薄膜的方法，以通过根据薄膜表面的温度调节孔的尺寸来同时引入和排出水和空气通过孔。 制造多孔硅薄膜的方法包括以下步骤：在硅晶片的表面上形成环状图案的光致抗蚀剂; 通过执行DIRE处理去除上部光刻胶; 在所述硅晶片的底面上形成具有孔状图案的光致抗蚀剂; 形成贯穿硅晶片的多个孔; 去除形成在硅晶片的底表面上的光致抗蚀剂; 用热转印部件涂覆硅晶片的上表面; 并且通过曝光过程去除涂覆的热转化构件，同时在孔附近仅保留环形热转变结构。

    유체의 이동을 온도에 의해 조절할 수 있는 다공질 실리콘 박막
    3.
    发明公开
    유체의 이동을 온도에 의해 조절할 수 있는 다공질 실리콘 박막 失效
    硅基水控制膜及其制造方法

    公开(公告)号：KR1020080042455A

    公开(公告)日：2008-05-15

    申请号：KR1020060110929

    申请日：2006-11-10

    Applicant: 한국에너지기술연구원

    Inventor： 유상필 ,  박제균 ,  김창수 ,  이원용 ,  윤영기 ,  양태현 ,  박석희 ,  엄석기 ,  임성대 ,  박구곤 ,  김민진 ,  박진수 ,  조중원

    IPC: H01L21/20

    CPC classification number: H01L21/02203 ,  H01L21/02164 ,  H01L21/02532 ,  H01L21/324

    Abstract: A porous silicon thin film capable of controlling fluid movement by temperature is provided to control the movement speed and an amount of water by using a structure made of a material having high thermal strain installed around of pores. A porous thin film includes a plurality of pores(1). A region for passing gas is coated with a non-aqueous material. A region for passing water is coated with an aqueous material. A structure made of a material having high thermal strain is installed around of the pores. The structure is installed into a certain depth of the pore from an entrance of the pore. The porous thin film is a silicon material(3). The silicon material is one of single crystalline silicon, poly crystal silicon, and epi silicon. The aqueous material is SiO2. The non-aqueous material is silen. The material having high thermal strain is one of SU-8, PDMS(polydimethylsiloxane), and PMMA(polymethyl methacrylate).

    Abstract translation: 提供能够通过温度控制流体移动的多孔硅薄膜，以通过使用由安装在孔周围的具有高热应变的材料制成的结构来控制移动速度和水量。 多孔薄膜包括多个孔（1）。 通过气体的区域涂覆有非水性材料。 通过水的区域涂覆有水性材料。 由具有高热应变的材料制成的结构安装在孔的周围。 该结构从孔的入口安装到孔的一定深度。 多孔薄膜是硅材料（3）。 硅材料是单晶硅，多晶硅和外延硅之一。 水性材料为SiO 2。 非水性材料是硅胶。 具有高热应变性的材料是SU-8，PDMS（聚二甲基硅氧烷）和PMMA（聚甲基丙烯酸甲酯）之一。

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