公开(公告)号：KR100853200B1

公开(公告)日：2008-08-20

申请号：KR1020070035723

申请日：2007-04-11

Applicant: 한국전자통신연구원

Inventor： 박종혁 ,  맹성렬 ,  박래만 ,  페라리안드레아씨. ,  파솔리안드레아 ,  콜리알란

IPC: B82B3/00 ,  B82Y40/00

CPC classification number: H01L29/267 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068

Abstract: A nanowire of multi-structure and a fabrication method thereof are provided to obtain a nanowire for optical element or electronic device by jointing silicon nanowire at both ends of compound semiconductor nanorod. A nanowire of multi-structure(100) has: a nanorod(110) of group II-VI compound or group III-V compound; and a silicon nanowire(130) which is jointed with each end in the opposite site of the nanorod and extended to each end of the nanorod, respectively. The compound semiconductor is one selected from a group consisting of AlN, AlP, AlAs, GaN, GaP, GaAs, InP, InAs, InSb, AlInGaP, AlGaAs, InGaN, CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, TiO2, HgTe and CdHgTe. A fabrication method of the nanowire of multi-structure comprises steps of: preparing a number of compound semiconductor; forming catalyst tip(120) at both ends of the nanorod; and growing silicon nanowire at both ends of the nanorod having catalyst tip. The catalyst tip is removed by wet-process after completing the growing of the silicon nanowire. The step of growing the silicon nanowire comprises a process comprising steps of: dispersing the nanorod on a substrate; and putting the substrate having the dispersed nanorod to a chamber in a silicon source atmosphere and subjecting the chamber to heat-treatment in order to decompose the silicon source to silicon element or silicon molecule.

Abstract translation: 提供多结构的纳米线及其制造方法，以通过在化合物半导体纳米棒的两端连接硅纳米线来获得光学元件或电子器件的纳米线。 多结构（100）的纳米线具有：II-VI族化合物或III-V族化合物的纳米棒（110）; 和一个硅纳米线（130），其分别与纳米棒的相对位置的每个端部连接并分别延伸到纳米棒的每一端。 化合物半导体是选自AlN，AlP，AlAs，GaN，GaP，GaAs，InP，InAs，InSb，AlInGaP，AlGaAs，InGaN，CdS，CdSe，CdTe，ZnO，ZnS，ZnSe，ZnTe，TiO2中的一种 ，HgTe和CdHgTe。 多结构纳米线的制造方法包括以下步骤：制备多种化合物半导体; 在纳米棒的两端形成催化剂尖端（120）; 并在具有催化剂末端的纳米棒的两端生长硅纳米线。 在完成硅纳米线的生长之后，通过湿法除去催化剂尖端。 生长硅纳米线的步骤包括以下步骤：将纳米棒分散在基底上; 并将具有分散的纳米棒的基板放置在硅源气氛中的室中，并对该室进行热处理，以将硅源分解成硅元素或硅分子。