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    METHOD FOR REDUCING BOW IN LAMINATE STRUCTURES
    7.
    发明申请
    METHOD FOR REDUCING BOW IN LAMINATE STRUCTURES 审中-公开
    降低层压板结构的方法

    公开(公告)号：WO2016112059A3

    公开(公告)日：2016-09-22

    申请号：PCT/US2016012252

    申请日：2016-01-06

    Applicant: CORNING INC

    Inventor： COUILLARD JAMES GREGORY

    IPC: B32B37/14 ,  B32B17/10

    CPC classification number: B32B17/10036 ,  B32B7/02 ,  B32B17/101 ,  B32B17/10761 ,  B32B17/1099 ,  B32B37/0015 ,  B32B37/06 ,  B32B37/144 ,  B32B38/0036 ,  B32B2038/0048 ,  B32B2038/006 ,  B32B2315/08 ,  B32B2419/00 ,  B32B2551/00 ,  B32B2605/08

    Abstract: Disclosed herein are methods for making asymmetric laminate structures (100) and methods for reducing bow in asymmetric laminate structures, the methods comprising subjecting the laminate structures to at least one thermal cycle comprising cooling the laminate structures to a first temperature near or below room temperature and heating the laminate structures to a second temperature near or below the lamination temperature. Also disclosed herein are laminate structures made according to such methods.

    Abstract translation: 本文公开了制备不对称层压结构（100）的方法和用于减少不对称层压结构中的弓的方法，所述方法包括使层压结构经受至少一个热循环，包括将层压结构冷却至接近或低于室温的第一温度，以及 将层压结构加热到接近或低于层压温度的第二温度。 本文还公开了根据这些方法制成的层压结构。

    GLASS-BASED SOI STRUCTURES
    10.
    发明专利
    GLASS-BASED SOI STRUCTURES 未知

    公开(公告)号：SG154331A1

    公开(公告)日：2009-08-28

    申请号：SG2006075808

    申请日：2004-02-17

    Applicant: CORNING INC

    Inventor： COUILLARD JAMES GREGORY ,  GADKAREE ALKA KISHOR ,  MACH JOSEPH FRANK

    IPC: H01L21/20 ,  H01L21/30 ,  H01L21/46 ,  H01L21/762 ,  H01L23/15 ,  H01L21/84

    Abstract: Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000oC, a resistivity at 250oC that is less than or equal to 1016 -cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000oC). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate (20) preferably includes a depletion region (23) which has a reduced concentration of the mobile positive ions. Figure 16

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