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    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    发光装置及其制造方法

    公开(公告)号：US20170077364A1

    公开(公告)日：2017-03-16

    申请号：US15260469

    申请日：2016-09-09

    Applicant: EPISTAR CORPORATION

    Inventor： Yih-Hua RENN ,  Ching-Tai CHENG ,  Chun-Hua SHIH

    IPC: H01L33/50 ,  H01L33/62

    CPC classification number: H01L33/508 ,  H01L33/502 ,  H01L33/62 ,  H01L2933/0041 ,  H01L2933/0066

    Abstract: A light-emitting device includes a light-emitting element and a wavelength conversion layer. The light-emitting element has a top surface, a bottom surface, a side surface, and a first electrical contact formed on the bottom surface. The distance between the top surface and the bottom surface has a first height (h1). The wavelength conversion layer has a first area (A1) located on the top surface of the light-emitting element and a second area (A2) located on the side surfaces and surrounding the first area. The first area has a second height (h2). The second area has a third height (h3) and a second width (w2). The second height (h2) is greater than the second width (w2). The difference of the third height and the sum of the first height and the second height is less than 15 μm.

    Abstract translation: 发光装置包括发光元件和波长转换层。 发光元件具有顶表面，底表面，侧表面和形成在底表面上的第一电触点。 顶表面和底表面之间的距离具有第一高度（h1）。 波长转换层具有位于发光元件顶表面上的第一区域（A1）和位于侧表面上且围绕第一区域的第二区域（A2）。 第一个区域有第二个高度（h2）。 第二区域具有第三高度（h3）和第二宽度（w2）。 第二高度（h2）大于第二宽度（w2）。 第一高度和第二高度的第三高度和总和的差小于15μm。

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20170222102A1

    公开(公告)日：2017-08-03

    申请号：US15395917

    申请日：2016-12-30

    Applicant: EPISTAR CORPORATION

    Inventor： Ching-Tai CHENG ,  Chun-Hua SHIH ,  Yih-Hua RENN

    IPC: H01L33/50 ,  H01L33/60 ,  H01L33/48 ,  H01L33/62

    CPC classification number: H01L33/508 ,  H01L33/483 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0041

    Abstract: A light-emitting device includes a light-emitting element, a wavelength conversion layer and a light pervious element. The light-emitting element includes a top surface, a bottom surface, a plurality of side surfaces connecting to the top surface and the bottom surface, and a first electrical contact formed on the bottom surface. The wavelength conversion layer covers the top surface of the light-emitting element to form a first thickness, has an average thickness, and includes a transparent binder and a plurality of wavelength conversion particles having an equivalent particle diameter D50. The light pervious element includes a light exiting surface and is disposed on the wavelength conversion layer. The D50 of the wavelength conversion particles is not great than 10 μm. A ratio of the average thickness to the D50 of the wavelength conversion layer is ranged from 6 to 20.

    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20180337313A1

    公开(公告)日：2018-11-22

    申请号：US16047734

    申请日：2018-07-27

    Applicant: EPISTAR CORPORATION

    Inventor： Ching-Tai CHENG ,  Chun-Hua SHIH ,  Yih-Hua RENN

    IPC: H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/48

    CPC classification number: H01L33/508 ,  H01L33/483 ,  H01L33/505 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0041

    Abstract: A light-emitting device includes a light-emitting element, a wavelength conversion layer, a light pervious element and a light-reflecting enclosure. The light-emitting element includes a top surface, a bottom surface, and a side surface between the top surface and the bottom surface. The wavelength conversion layer covers the top surface of the light-emitting element, and includes a plurality of wavelength conversion particles having an equivalent particle diameter D50. The light pervious element includes a recess structure and an outer wall. The light-reflecting enclosure surrounds the outer wall. The D50 of the wavelength conversion particles is not great than 10 μm. The recess structure is laterally overlapped with the side surface of the light-emitting element and the wavelength conversion layer.

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