公开(公告)号：US20210343773A1

公开(公告)日：2021-11-04

申请号：US17375176

申请日：2021-07-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Nao INOUE ,  Ryosuke KOIKE ,  Haruyuki NAKAYAMA

IPC: H01L27/146

Abstract: A light detection device includes: a back-illuminated light receiving element; a circuit element; a connection member; an underfill; and a light shielding mask. The light shielding mask includes a frame having an opening and a light shielding layer formed on an inner surface of the opening. A first opening edge on the side of the circuit element in the opening is located at the outside of an outer edge of the light receiving element. A second opening edge opposite to the circuit element in the opening is located at the inside of the outer edge of the light receiving element. The opening is narrowed from the first opening edge toward the second opening edge. A width of the frame increases from the first opening edge toward the second opening edge. The underfill reaches a gap between the light receiving element and the light shielding layer.

公开(公告)号：US20180083143A1

公开(公告)日：2018-03-22

申请号：US15561996

申请日：2016-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Noburo HOSOKAWA ,  Nao INOUE ,  Katsumi SHIBAYAMA

IPC: H01L31/02 ,  H01L31/0216 ,  H01L23/00

CPC classification number: H01L27/14687 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L23/532 ,  H01L24/02 ,  H01L24/05 ,  H01L24/13 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/103 ,  H01L31/107 ,  H01L2224/02313 ,  H01L2224/0233 ,  H01L2224/0235 ,  H01L2224/0236 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/0345 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/10126 ,  H01L2224/11 ,  H01L2224/12105 ,  H01L2224/13007 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2924/10253 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/00014

Abstract: A semiconductor device includes a semiconductor substrate in which a through hole is formed, a first wiring, an insulating layer, and a second wiring that is electrically connected to the first wiring in an opening of the insulating layer. The insulating layer has a first curved portion that covers an inner surface of a through hole between a first opening and a second opening and a second curved portion that covers an edge of the second opening. A surface in the first curved portion is curved in a convex shape toward the side opposite the inner surface of the through hole. The surface in the second curved portion is curved in a convex shape toward the side opposite the inner surface of the through hole.

公开(公告)号：US20240178249A1

公开(公告)日：2024-05-30

申请号：US18432122

申请日：2024-02-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Nao INOUE ,  Ryosuke Koike ,  Haruyuki Nakayama

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/13109 ,  H01L2224/16145 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/73204

Abstract: A light detection device includes: a back-illuminated light receiving element; a circuit element; a connection member; an underfill; and a light shielding mask. The light shielding mask includes a frame having an opening and a light shielding layer formed on an inner surface of the opening. A first opening edge on the side of the circuit element in the opening is located at the outside of an outer edge of the light receiving element. A second opening edge opposite to the circuit element in the opening is located at the inside of the outer edge of the light receiving element. The opening is narrowed from the first opening edge toward the second opening edge. A width of the frame increases from the first opening edge toward the second opening edge. The underfill reaches a gap between the light receiving element and the light shielding layer.

公开(公告)号：US20200227456A1

公开(公告)日：2020-07-16

申请号：US16827866

申请日：2020-03-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Nao INOUE ,  Ryosuke KOIKE ,  Haruyuki NAKAYAMA

IPC: H01L27/146

Abstract: A light detection device includes: a back-illuminated light receiving element; a circuit element; a connection member; an underfill; and a light shielding mask. The light shielding mask includes a frame having an opening and a light shielding layer formed on an inner surface of the opening. A first opening edge on the side of the circuit element in the opening is located at the outside of an outer edge of the light receiving element. A second opening edge opposite to the circuit element in the opening is located at the inside of the outer edge of the light receiving element. The opening is narrowed from the first opening edge toward the second opening edge. A width of the frame increases from the first opening edge toward the second opening edge. The underfill reaches a gap between the light receiving element and the light shielding layer.

公开(公告)号：US20190341420A1

公开(公告)日：2019-11-07

申请号：US16514003

申请日：2019-07-17

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Noburo HOSOKAWA ,  Nao INOUE ,  Katsumi SHIBAYAMA

IPC: H01L27/146 ,  H01L23/00 ,  H01L31/0216 ,  H01L23/48 ,  H01L21/768 ,  H01L31/103 ,  H01L21/3205 ,  H01L23/522 ,  H01L23/532 ,  H01L31/02 ,  H01L31/107 ,  H01L31/0224

Abstract: A method of manufacturing a semiconductor device includes a first process in which a first wiring 3 is provided on a first surface 2a of a semiconductor substrate 2; a second process in which a light transmitting substrate 5 is attached to the first surface 2a; a third process in which the semiconductor substrate 2 is thinned so that the thickness of the semiconductor substrate 2 is smaller than the thickness of the light transmitting substrate 5; a fourth process in which a through hole 7 is formed in the semiconductor substrate 2; a fifth process in which a dip coating method is performed using a first resin material and thus a resin insulating layer 10 is provided; a sixth process in which a contact hole 16 is formed in the resin insulating layer 10; and a seventh process in which a second wiring 8 is provided on a surface 10b of the resin insulating layer 10, and the first wiring 3 and the second wiring 8 are electrically connected via a contact hole 16.

公开(公告)号：US20230230988A1

公开(公告)日：2023-07-20

申请号：US18120594

申请日：2023-03-13

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Nao INOUE ,  Ryosuke KOIKE ,  Haruyuki NAKAYAMA

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14623 ,  H01L27/1464 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/2919 ,  H01L2224/13109 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/73204

Abstract: A light detection device includes: a back-illuminated light receiving element; a circuit element; a connection member; an underfill; and a light shielding mask. The light shielding mask includes a frame having an opening and a light shielding layer formed on an inner surface of the opening. A first opening edge on the side of the circuit element in the opening is located at the outside of an outer edge of the light receiving element. A second opening edge opposite to the circuit element in the opening is located at the inside of the outer edge of the light receiving element. The opening is narrowed from the first opening edge toward the second opening edge. A width of the frame increases from the first opening edge toward the second opening edge. The underfill reaches a gap between the light receiving element and the light shielding layer.

公开(公告)号：US20180175100A1

公开(公告)日：2018-06-21

申请号：US15562001

申请日：2016-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Noburo HOSOKAWA ,  Nao INOUE ,  Katsumi SHIBAYAMA

IPC: H01L27/146 ,  H01L23/00

CPC classification number: H01L27/14687 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L23/532 ,  H01L24/02 ,  H01L24/05 ,  H01L24/13 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/103 ,  H01L31/107 ,  H01L2224/02313 ,  H01L2224/0233 ,  H01L2224/0235 ,  H01L2224/0236 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/0345 ,  H01L2224/05558 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/10126 ,  H01L2224/11 ,  H01L2224/12105 ,  H01L2224/13007 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2924/10253 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2924/00014

Abstract: A method includes a first process in which a first wiring is provided on a surface of a semiconductor substrate; a second process in which a light transmitting substrate is attached to the surface; a third process in which the semiconductor substrate is thinned so that the thickness of the semiconductor substrate is smaller than the thickness of the light transmitting substrate; a fourth process in which a through hole is formed in the semiconductor substrate; a fifth process in which a dip coating method is performed using a resin material and thus a resin insulating layer is provided; a sixth process in which a contact hole is formed in the resin insulating layer; and a seventh process in which a second wiring is provided on a surface of the resin insulating layer, and the first wiring and the second wiring are electrically connected via a contact hole.

公开(公告)号：US20180136134A1

公开(公告)日：2018-05-17

申请号：US15553337

申请日：2016-02-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Katsumi SHIBAYAMA ,  Masashi ITO ,  Kazuto OFUJI ,  Hiroki OYAMA ,  Yoshihiro MARUYAMA ,  Nao INOUE

IPC: G01N21/65

CPC classification number: G01N21/658 ,  B82Y40/00 ,  G01N2021/651

Abstract: An SERS element includes a substrate, a fine structure portion formed on a surface of the substrate and having a plurality of pillars, and a conductor layer formed on the fine structure portion and constituting an optical functional portion that causes surface-enhanced Raman scattering. A groove is provided in an outer surface of each pillar. A plurality of gaps are formed in the conductor layer by forming the conductor layer on the outer surface of each pillar in a state in which at least a portion of an inner surface of the groove is exposed.

公开(公告)号：US20240279051A1

公开(公告)日：2024-08-22

申请号：US18627028

申请日：2024-04-04

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daiki SUZUKI ,  Nao INOUE ,  Katsumi SHIBAYAMA

IPC: B81B3/00 ,  B81C1/00 ,  G02B26/08

CPC classification number: B81B3/0072 ,  B81C1/00666 ,  G02B26/0833 ,  B81B2201/042 ,  B81B2207/07 ,  B81C2201/0104 ,  B81C2201/0181

Abstract: The damascene wiring structure includes a base including a main surface provided with a groove, an insulating layer including a first portion provided on an inner surface of the groove and a second portion provided on the main surface, a metal layer provided on the first portion, a wiring portion embedded in the groove, and a cap layer provided to cover the second portion and the wiring portion. A surface of a boundary part between the first portion and the second portion includes an inclined surface inclined with respect to a direction perpendicular to the main surface.

公开(公告)号：US20210403320A1

公开(公告)日：2021-12-30

申请号：US17288642

申请日：2019-10-30

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Nao INOUE ,  Jo ITO ,  Go TANAKA ,  Atsuya IIMA ,  Daiki SUZUKI ,  Katsumi SHIBAYAMA

IPC: B81C1/00 ,  B81B7/00

Abstract: A method of manufacturing a semiconductor substrate according to an embodiment includes a first step of forming a groove having a bottom surface and a side surface on which scallops are formed by performing a process including isotropic etching on a main surface of a substrate, a second step of performing at least one of a hydrophilic treatment on the side surface of the groove and a degassing treatment on the groove, and a third step of removing the scallops formed on the side surface of the groove and planarizing the side surface by performing anisotropic wet etching in a state where the bottom surface of the recess is present.