公开(公告)号：JPH1174484A

公开(公告)日：1999-03-16

申请号：JP15123098

申请日：1998-06-01

Applicant: IBM

Inventor： ALFRED GRILL ,  DAVID EDWARD KOTEKKI ,  KATHRYN LYN SENGER

IPC: H01L27/10 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To prevent silicon from passing through an electrode in one direction to diffuse and oxygen from passing through the electrode in the other direction to diffuse during a high-temperature treatment of a high-dielectric constant dielectric material by a method wherein a barrier layer containing a large quantity of the oxygen is made to interpose between a noble metal layer and a noble metal silicide layer to form a composite layer structure. SOLUTION: A conductive silicon contributory conductive plug 7 and a dielectric layer 8 are formed on a silicon substrate 9 and a noble metal layer 6 is made to adhere on the regions of these of the plug 7 and the layer 8. The plug 7 is buried in the layer 8, the plug 7 is a doped polvsilicon layer and the layer 8 is an SiO2 layer. After this structure is annealed in an atmosphere containing oxygen, the structure is formed into a composite layer structure incorporating the layer 6. Thereby, the oxygen is deposited on the reaction front surface boundary between a noble metal silicide layer and an unreacted noble metal layer during the annealing, a diffusion barrier layer 5 to prevent the unreacted noble metal layer from being consumed more than that is formed to form a three-layer structure consisting of the layer 6, the noble metal silicide layer 3 and the layer 5 between the layers 6 and 3 and silicon and the oxygen are mutually prevented from being diffused.