公开(公告)号：CA2142377A1

公开(公告)日：1995-10-22

申请号：CA2142377

申请日：1995-02-13

Applicant: IBM

Inventor： GILL HARDAYAL S ,  PINARBASI MUSTAFA

IPC: G11B5/39 ,  G01R33/09

Abstract: A dual element magnetoresistive (MR) sensor is disclosed comprising two MR elements separated by a high resistivity conductive spacer material. A layer of hard bias material, which abuts one of the MR elements at each of its track edges, has a magnetization times thickness value substantially matched to that of the one MR element to bias it in one longitudinal direction. An exchange bias layer biases the other MR element by exchange coupling in an opposite longitudinal direction to achieve magnetic stabilization between the MR elements. The exchange bias layer abuts the other MR element at each of its track edges and has a magnetization times thickness value substantially matched to that of the other MR element. Alternatively, the exchange bias layer extends from one track edge to an opposite track edge in continuous underlying or overlying contact with the other MR element.