公开(公告)号：DE3851294D1

公开(公告)日：1994-10-06

申请号：DE3851294

申请日：1988-10-03

Applicant: IBM

Inventor： CHANCE DUDLEY AUGUSTUS ,  HOUGHAM GARETH GEOFFREY ,  GOLAND DAVID BRIAN

IPC: H05K1/09 ,  H01L21/48 ,  H01L23/13 ,  H01L23/15 ,  H01L23/498 ,  H05K1/05 ,  H05K3/12 ,  H05K3/40 ,  H05K3/44 ,  H05K3/46

公开(公告)号：MY139408A

公开(公告)日：2009-09-30

申请号：MYPI0501939

申请日：1995-12-01

Applicant: IBM ,  CARBORUNDUM CO

Inventor： CASEY JON ALFRED ,  SHINDE SUBHASH LAXMAN ,  VALLABHANENI RAO VENKATESWARA ,  YOUNGMAN ROBERT A ,  HERRON LESTER WYNN ,  CORDERO CARLA NATALIA ,  FASANO BENJAMIN VITO ,  GOLAND DAVID BRIAN ,  HANNON ROBERT ,  HARRIS JONATHAN H ,  JOHNSON GREGORY MARVIN ,  PATEL NIRANJAN MOHANLAL ,  REITTER ANDREW MICHAEL

IPC: B22F3/00 ,  B22F7/02 ,  B32B18/00 ,  C04B35/581 ,  C04B37/02 ,  C04B41/51 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  C22C29/16 ,  H01L21/48 ,  H01L23/373 ,  H05K1/03 ,  H05K3/24 ,  H05K3/40 ,  H05K3/46

Abstract: DISCLOSED IS AN ALUMINUM NITRIDE BODY HAVING GRADED METALLURGY AND A METHOD FOR MAKING SUCH A BODY. THE ALUMINUM NITRIDE BODY HAS AT LEAST ONE VIA AND INCLUDES A FIRST LAYER IN DIRECT CONTACT WITH THE ALUMINUM NITRIDE BODY AND A SECOND LAYER IN DIRECT CONTACT WITH, AND THAT COMPLETELY ENCAPSULATES, THE FIRST LAYER. THE FIRST LAYER INCLUDES 30 TO 60 VOLUME PERCENT ALUMINUM NITRIDE AND 40 TO 70 VOLUME PERCENT TUNGSTEN AND/OR MOLYBDENUM WHILE THE SECOND LAYER INCLUDES 90 TO 100 VOLUME PERCENT OF TUNGSTEN AND/OR MOLYBDENUM AND 0 TO 10 VOLUME PERCENT OF ALUMINUM NITRIDE.

公开(公告)号：MY134821A

公开(公告)日：2007-12-31

申请号：MYPI9503713

申请日：1995-12-01

Applicant: IBM ,  CARBORUNDUM CO

Inventor： CASEY JON ALFRED ,  REITTER ANDREW MICHAEL ,  SHINDE SUBHASH LAXMAN ,  VALLABHANENI RAO VENKATESWARA ,  YOUNGMAN ROBERT A ,  CORDERO CARLA NATALIA ,  FASANO BENJAMIN VITO ,  GOLAND DAVID BRIAN ,  HANNON ROBERT ,  HARRIS JONATHAN H ,  HERRON LESTER WYNN ,  JOHNSON GREGORY MARVIN ,  PATEL NIRANJAN MOHANLAL

IPC: B22F3/00 ,  B22F7/02 ,  B32B18/00 ,  C04B35/581 ,  C04B37/02 ,  C04B41/51 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  C22C29/16 ,  H01L21/48 ,  H01L23/373 ,  H05K1/03 ,  H05K3/24 ,  H05K3/40 ,  H05K3/46

Abstract: DISCLOSED IS AN ALUMINUM NITRIDE BODY HAVING GRADED ETALLURGY AND A METHOD FOR MAKING SUCH A BODY. THE ALUMINUM NITRIDE ODY HAS AT LEAST ONE VIA AND INCLUDES A FIRST LAYER IN DIRECT ONTACT WITH THE ALUMINUM NITRIDE BODY AND A SECOND LAYER IN DIRECT NTACT WITH, AND THAT COMPLETELY ENCAPSULATES, THE FIRST LAYER. THE FIRST LAYER INCLUDES 30 TO 60 VOLUME PERCENT ALUMINUM ITRIDE AND 40 TO 70 VOLUME PERCENT TUNGSTEN AND/OR MOLYBDENUM WHILE THE SECOND LAYER INCLUDES 90 TO 100 VOLUME PERCENT OF TUNGSTEN AND/OR MOLYBDENUM 0 TO 10 VOLUME PERCENT OF ALUMINUM NITRIDE. (FIG. 1)

公开(公告)号：DE3851294T2

公开(公告)日：1995-03-30

申请号：DE3851294

申请日：1988-10-03

Applicant: IBM

Inventor： CHANCE DUDLEY AUGUSTUS ,  HOUGHAM GARETH GEOFFREY ,  GOLAND DAVID BRIAN

IPC: H05K1/09 ,  H01L21/48 ,  H01L23/13 ,  H01L23/15 ,  H01L23/498 ,  H05K1/05 ,  H05K3/12 ,  H05K3/40 ,  H05K3/44 ,  H05K3/46