公开(公告)号：JP2000216349A

公开(公告)日：2000-08-04

申请号：JP32077399

申请日：1999-11-11

Applicant: IBM

Inventor： HEMANTA K VIKURAMASHINGE ,  SARAF RAVI F

IPC: C12N15/00 ,  G11C11/22 ,  G11C13/02 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

Abstract: PROBLEM TO BE SOLVED: To realize a ferroelectric storage read/write memory by providing a ferroelectric substance between, a pair of conductors and setting a sufficient isolation distance for permitting a tunnel current the distance between a pair of conductors. SOLUTION: Two isolation electrodes 1, 2 are interconnected through a region 3 of ferroelectric substance. The isolation electrodes 1, 2 are normally made of a conductive material and have line width of 1-500 nm and thickness of 100-1000 nm. The ferroelectric substance has thickness of about 10 nm or less which permits tunnel effect. Available ferroelectric substance includes barium titanate having Curie point of 120 deg.C, potassium niobate having Curie point of 415 deg.C, triglycine sulfate having Curie point of 49 deg.C, Rochelle salt having Curie point of 23 deg.C, and iron niobate having Curie point of 112 deg.C. Data can be stored by aligning the electric dipole in the ferroelectric layer.