公开(公告)号：BR9501865A

公开(公告)日：1995-11-07

申请号：BR9501865

申请日：1995-04-28

Applicant: IBM

Inventor： CHEN MAO-MIN ,  GUTBERLET MARY KATHRYN ,  KROUNBI MOHAMAD TOWFIK ,  LATIMER JACQUELINE K

IPC: G01R33/09 ,  G11B5/39 ,  G11B5/127

Abstract: A magnetoresistive sensor (30) includes a magnetoresistive material, formed on a substrate (50), and having a first edge and a second edge. A first multilayered conductive lead structure (38) is electrically connected to the first edge, and a second multilayered conductive lead structure (40) is electrically connected to the second edge. The first and second conductive lead structures are constructed of multiple layers of thin film materials that alternate between at least one layer of a thin film of a refractory metal (140) interlaid between at least two thin film layers of a highly conductive metal (130,150).

公开(公告)号：SG30326A1

公开(公告)日：1996-06-01

申请号：SG1995000164

申请日：1995-03-25

Applicant: IBM

Inventor： LATIMER JACQUELINE K ,  CHEN MAO-MIN ,  GUTBERLET MARY KATHRYN ,  KROUNBI MOHAMAD TOWFIK ,  PINARBASI MUSTAFA

IPC: G11B5/39