公开(公告)号：JP2001060698A

公开(公告)日：2001-03-06

申请号：JP2000209836

申请日：2000-07-11

Applicant: IBM

Inventor： MICHAEL J HAAGUROVU ,  MANDELMAN JACK A

IPC: H01L21/28 ,  H01L21/768 ,  H01L23/522 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To form an SOI(silicon-on-insulator) structure substrate, having a body contact (a base-body contact) under a gate conductor. SOLUTION: A gate conductor on SOI semiconductor structure is partitioned into segments, and the body contact is formed under the gate conductor segment. The body contact is formed by an opening. The opening is extended to a silicon substrate 22 through a TEOS layer 24, an SOI layer 18 and an oxide layer 20. A polysilicon layer 38, a TEOS layer 40 and a polysilicon layer 42 are formed at the opening. Charges stored from a body region under a gate can be removed rapidly by shaping the body contact, and a stable efficient SOI MOSFET can be realized.