公开(公告)号：MY122155A

公开(公告)日：2006-03-31

申请号：MYPI9904298

申请日：1999-10-06

Applicant: IBM

Inventor： BRACCHITTA JOHN A ,  MANN RANDY W ,  OPPOLD JEFFREY H

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/768 ,  H01L29/00 ,  H01L29/76 ,  H01L31/119

Abstract: A SEMICONDUCTOR INTEGRATED CIRCUIT MEMORY CELL, INCLUDING AT LEAST THREE TRANSISTORS (20, 21. 22) AND A CAPACITOR (10) TO FORM A DRAM. THE MEMORY CELL IS FABRICATED ON A SEMICONDUCTOR SUBSTRATE INCLUDING IMPURITY REGIONS (5), AND USING TWO SEMICONDUCTOR FILMS (6, 9), WITH DIELECTRIC FILMS (16) BETWEEN THE SEMICONDUCTOR FILMS. THE CAPACITOR CONTAINS TWO ELECTRODES. A SUBSTRATE IMPURITY REGION FORMS ONE OF THE ELECTRODES; THE OTHER ELECTRODE IS A SEMICONDUCTOR FILM WHICH CONNECTS THE GATE OF ONE DEVICE TO AN IMPURITY REGION OF ANOTHER. THE METHOD FOR MANUFACTURING THE ABOVE-DESCRIBED INTEGRATED CIRCUIT, WHICH MAY BE USED FOR THE MANUFACTURE OF SIMILAR CIRCUITS, IS ALSO DISCLOSED.