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1.发明申请
公开(公告)号：WO02054389A2
公开(公告)日：2002-07-11
申请号：PCT/GB0105645
申请日：2001-12-19
Inventor： PINARBASI MUSTAFA
CPC classification number: B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10T29/49021 , Y10T29/49032 , Y10T29/49036 , Y10T29/49043 , Y10T29/49044
Abstract: A spin valve sensor (400) is provided with a negative ferromagnetic coupling field -HFC for properly biasing a free layer and a spin filter (302) layer is employed between the free layer (222) and a capping layer for increasing the magnetoresistive coefficient dr/R of the spin valve sensor. A top portion (402) of the free layer is oxidized for improving the negative ferromagnetic coupling field HFC when the spin filter layer is employed for increasing the magnetoresistive coefficient dr/R.
Abstract translation: 自旋阀传感器（400）设置有用于适当地偏置自由层的负铁磁耦合场-HFC，并且在自由层（222）和覆盖层之间采用自旋滤波器（302）层，以增加磁阻系数dr / R自旋阀传感器。 当采用自旋滤波层以增加磁阻系数dr / R时，自由层的顶部（402）被氧化以改善负的铁磁耦合场HFC。
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公开(公告)号：JP2001006132A
公开(公告)日：2001-01-12
申请号：JP2000136844
申请日：2000-05-10
Applicant: IBM
Inventor： PINARBASI MUSTAFA
Abstract: PROBLEM TO BE SOLVED: To improve the magnetic resistance coefficient(dr/R) of a spin valve sensor. SOLUTION: A double seed layer structure is used between a first reading gap layer 216 and a spin valve sensor 300 so that a magnetic resistance coefficient(dr/R) can be increased. In a bottom spin valve sensor, the double seed layer structure is positioned between the first reading gap layer 216 and a pinning layer 214. In a top spin valve sensor, the double seed layer structure is positioned between a first reading gap layer 216 and a free layer 202. It is desired that the pinning layer 214 is made of iridium manganese(IrMn). The double seed layer structure includes a first seed layer 304 made of metallic oxide and a second seed layer 306 made of non-magnetic metal. In a desired execution configuration, the first seed layer is made of nickel oxide manganese(NiMnO) and the second seed layer is made of copper(Cu).
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公开(公告)号：JP2000096230A
公开(公告)日：2000-04-04
申请号：JP13893499
申请日：1999-05-19
Applicant: IBM
Inventor： PINARBASI MUSTAFA
Abstract: PROBLEM TO BE SOLVED: To obtain an ion beam deposition system which reduces a production cost by increasing the wafer throughput of a deposition system. SOLUTION: A first wafer is moved to a first IBS deposition chamber 302 where reactive sputtering deposition is executed. The first wafer is thereafter moved to a second IBS deposition chamber 304 for the purpose of a metallic layer deposition process. At this time, a second wafer is inserted into the first IBS deposition chamber 302 and is subjected to the reactive sputtering deposition. The reactive sputtering deposition is executed simultaneously with the deposition of the metallic layer on the first wafer in the second IBS deposition chamber. After the metallic layer deposition of the first wafer ends, the first wafer is placed on a wafer stack (base) 360 outside the second IBS deposition chamber 304. The second wafer is moved to the second IBS deposition chamber 304. A third wafer is inserted into the system and the process flow is continuously executed.
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公开(公告)号：JP2001052317A
公开(公告)日：2001-02-23
申请号：JP2000173750
申请日：2000-06-09
Applicant: IBM
Inventor： PINARBASI MUSTAFA
Abstract: PROBLEM TO BE SOLVED: To decrease a ferromagnetic coupling field between a pinned layer and a free layer by constituting a pinned layer structure including two cobalt- based films and a nickel based intermediate film, and arranging the intermediate film between the two films. SOLUTION: A nickel iron (NiFe) intermediate film 406 is arranged between a first cobalt(Co) film 408 and a second cobalt(Co) film 410 of a second AP pinned layer 402. The cobalt(Co) layer 408 becomes a shield layer to the nickel iron (NiFe) layer 406 and the nickel iron (NiFe) layer 406 becomes a shield layer to the second cobalt(Co) layer 410 by sequentially forming the layers 408, 406 and 410. A multi-film structure of the second AP pinned layer 402 enhances a smoothness of these layers, and decreases a ferromagnetic coupling field. An increase in smoothness of surfaces of the layers decreases a ferromagnetic coupling field between the second AP pinned layer 402 and a free layer 206.
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公开(公告)号：JP2000073165A
公开(公告)日：2000-03-07
申请号：JP15325599
申请日：1999-06-01
Applicant: IBM
Inventor： PINARBASI MUSTAFA
IPC: H01F41/18 , C23C14/04 , C23C14/34 , C23C14/46 , G11B5/31 , G11B5/39 , H01F10/08 , H01F10/32 , H01J37/317 , H01L21/203 , H01L43/12
Abstract: PROBLEM TO BE SOLVED: To provide an ion beam sputtering system capable of forming a laminated structure improved in the uniformity of the physical characteristics and thickness of each layer on a wafer substrate. SOLUTION: In an ion beam sputtering system having a vacuum chamber 522, an ion beam source 521, a plurality of targets 523, a shutter 510 and a substrate stage for fixing and holding a wafer substrate in the process of ion beam sputtering deposition in a vacuum chamber, the substrate stage is tilted with the vertical axis as the center in such a manner that flux from the targets strikes against the wafer substrate at a nonvertical angle, by which the physical, electrical and magnetic properties and thickness of the thin film deposited on the substrate improve.
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Patent Agency Ranking6.发明专利
公开(公告)号：JP2003099906A
公开(公告)日：2003-04-04
申请号：JP2002183972
申请日：2002-06-25
Applicant: IBM
Inventor： PINARBASI MUSTAFA
Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a spin valve sensor that can obtain a desirable ferroimagnetic coupled magnetic field (HF) by a current sputtering method. SOLUTION: A spin valve sensor is formed into pinned layers by sputtering cobalt iron (CoFe) in a nitrogen (N2 ) atmosphere. By this method, sputtering becomes possible over a wide range on a copper spacer layer for realizing a desirable ferromagnetic coupled magnetic field (HF) between the pinned layers and free layers in a spin valve sensor.
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公开(公告)号：JP2002124718A
公开(公告)日：2002-04-26
申请号：JP2001198254
申请日：2001-06-29
Applicant: IBM
Inventor： PINARBASI MUSTAFA
Abstract: PROBLEM TO BE SOLVED: To provide a spin valve wherein a coupling magnetic field is small and stable. SOLUTION: A first ferromagnetic layer 105 is deposited on a substrate 104. A first surface 109 of the layer 105 is exposed to an atmosphere rich in oxygen, which is physically adsorbed by the first surface 109. After the partial pressure of oxygen is reduced quickly, a spacer layer 110 composed of copper is deposited to be about 2 nm thick on the first surface 109 subjected to oxygen treatment. A second surface 111 of the spacer layer 110 is treated by using oxygen. After the partial pressure of oxygen is reduced quickly, a second ferromagnetic layer 112 is deposited on the second surface 111 subjected to oxygen treatment. By the effect of surface adsorption of oxygen, it is restrained that layers mix with each other, and roughness of the first surface 109 and the second surface 111 are reduced. As a result, the coupling magnetic field of the spin valve is reduced, and stable in the case of hard bake annealing. Further, the rate of change of magneto resistance also becomes remarkably large.
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公开(公告)号：JP2001195711A
公开(公告)日：2001-07-19
申请号：JP2000351163
申请日：2000-11-17
Applicant: IBM
Inventor： PINARBASI MUSTAFA
Abstract: PROBLEM TO BE SOLVED: To provide an improved lead layer by diagonal ion beam sputtering and annealing. SOLUTION: The method for producing the rhodium(Rh) lead layer of a read sensor includes a 1st step in which a rhodium(Rh) lead layer is subjected to diagonal ion beam sputtering and a 2nd step in which annealing is carried out after the 1st step. Since the stress and resistance of the rhodium(Rh) lead layer are lowered by the method, the objective lead layer desirable for use in the sensor of a read head is provided.
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9.发明专利
公开(公告)号：MY137115A
公开(公告)日：2008-12-31
申请号：MYPI9904203
申请日：1999-09-29
Applicant: IBM
Inventor： PINARBASI MUSTAFA
Abstract: A BILAYER SEEDLAYER IS EMPLOYED BETWEEN A HARD MAGNETIC BIASING LAYER AND A NICKEL OXIDE (NIO) PINNING LAYER OF A BOTTOM SPIN VALVE SENSOR WHEREIN THE BIASING LAYER STABILIZES THE MAGNETIC DOMAINS OF MAGNETIC LAYERS IN THE SPIN VALVE SENSOR. THE BILAYER SEEDLAYER INCLUDES A TANTALUM (TA) LAYER ON THE NICKEL OXIDE (NIO) PINNING LAYER AND A CHROMIUM (CR) LAYER ON THE TANTALUM (TA) LAYER. THE HARD MAGNETIC LAYER IS ON THE CHROMIUM (CR) LAYER. THE HARD MAGNETIC LAYER IS A COBALT (CO) BASED HARD MAGNETIC MATERIAL. IN A PREFERRED EMBODIMENT THE TOTAL THICKNESS OF THE BILAYER SEEDLAYER HAS BEEN REDUCED TO LESS THAN 70 A WITHOUT SACRIFICING THE REQUIRED COERCIVITY OF THE HARD MAGNETIC LAYER FOR WITHSTANDING MAGNETIC INCURSIONS WHICH TEND TO SWITCH THE MAGNETIC SPINS OF THE HARD MAGNETIC LAYER.FIG. 9.
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公开(公告)号：DE69902422T2
公开(公告)日：2003-05-08
申请号：DE69902422
申请日：1999-05-13
Applicant: IBM
Inventor： PINARBASI MUSTAFA
IPC: H01F41/18 , C23C14/04 , C23C14/34 , C23C14/46 , G11B5/31 , G11B5/39 , H01F10/08 , H01F10/32 , H01J37/317 , H01L21/203 , H01L43/12 , G11B5/84
Abstract: An ion beam sputtering system (500) having a chamber (522), an ion beam source (521), multiple targets (523), a shutter (510), and a substrate stage (541) for securely holding a wafer (531) substrate during the ion beam sputtered deposition process in the chamber. The substrate stage is made to tilt about its vertical axis such that the flux from the targets hit the wafer substrate at a non-normal angle resulting in improved physical, electrical and magnetic properties as well as the thickness uniformity of the thin films deposited on the substrate in the ion beam sputtering system.
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