公开(公告)号：DE19518044A1

公开(公告)日：1995-12-14

申请号：DE19518044

申请日：1995-05-17

Applicant: IBM

Inventor： BEACH DAVID B ,  GRILL ALFRED ,  SMART CHRISTOPHER J

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

Abstract: A storage capacitor having high dielectric constant materials and a method for forming same are described. The method solves the problems associated with fabrication of planar capacitors for DRAM chips constructed from inorganic oxides with perovskite structure. These materials are not readily etched by conventional ion etching techniques. These materials also react with silicon and silicon dioxide and the disclosed process avoids these interactions.

公开(公告)号：DE19518044C2

公开(公告)日：1997-04-24

申请号：DE19518044

申请日：1995-05-17

Applicant: IBM

Inventor： BEACH DAVID B ,  GRILL ALFRED ,  SMART CHRISTOPHER J

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

Abstract: A storage capacitor having high dielectric constant materials and a method for forming same are described. The method solves the problems associated with fabrication of planar capacitors for DRAM chips constructed from inorganic oxides with perovskite structure. These materials are not readily etched by conventional ion etching techniques. These materials also react with silicon and silicon dioxide and the disclosed process avoids these interactions.