公开(公告)号：DE102005036073A1

公开(公告)日：2006-03-23

申请号：DE102005036073

申请日：2005-08-01

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： GAIDIS MICHAEL C ,  LEUSCHNER RAINER ,  ROMANKIW LUBOMYR TARAS ,  RUBINO JUDY M

IPC: H01L27/22 ,  H01L21/768

Abstract: A method of forming a ferromagnetic liner on conductive lines of magnetic memory devices and a structure thereof. The ferromagnetic liner increases the flux concentration of current run through the conductive lines, reducing the amount of write current needed to switch magnetic memory cells. The conductive lines are formed in a plate-up method, and the ferromagnetic liner is selectively formed on the plated conductive lines. The ferromagnetic liner may also be formed over conductive lines and a top portion of vias in a peripheral region of the workpiece.

公开(公告)号：DE102005036073B4

公开(公告)日：2008-12-18

申请号：DE102005036073

申请日：2005-08-01

Applicant: IBM ,  QIMONDA AG

Inventor： GAIDIS MICHAEL C ,  LEUSCHNER RAINER ,  ROMANKIW LUBOMYR TARAS ,  RUBINO JUDY M

IPC: H01L27/22 ,  H01L21/768

Abstract: A method of forming a ferromagnetic liner on conductive lines of magnetic memory devices and a structure thereof. The ferromagnetic liner increases the flux concentration of current run through the conductive lines, reducing the amount of write current needed to switch magnetic memory cells. The conductive lines are formed in a plate-up method, and the ferromagnetic liner is selectively formed on the plated conductive lines. The ferromagnetic liner may also be formed over conductive lines and a top portion of vias in a peripheral region of the workpiece.