公开(公告)号：JPH08236520A

公开(公告)日：1996-09-13

申请号：JP28700995

申请日：1995-11-06

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BOKU SATOSHI ,  GU CHINKON

IPC: H01L21/768 ,  H01L21/265 ,  H01L21/31 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To harden an SOG film so that any residual substance can not be generated by forming a second insulating film by SOG on a first insulating film on a substrate, operating a low temperature processing and a plasma processing for hardening the second insulating film, and forming a third insulating film. SOLUTION: A first insulating film 5 is formed by forming an oxide film by a PECVD method. The spin coating of SOG substances is operated for flattening the surface so that a second insulating film 7 can be formed. A low temperature thermal processing is executed several times while a temperature is successively increased, and solvent components, volatile organic components, and moisture excluding organic substances used as coupling agent included in the second insulating film 7 are removed. A plasma processing is executed to the second insulating film 7, and residual substances such as Si-OH, H2 O, solvent, and volatile organic substances are removed so that a membranous quality with high elasticity can be formed. A third insulating film 9 is formed so that an insulating layer 11 can be completed. Thus, it is possible to prevent the current/voltage characteristics of the SOG film from being deteriorated.

公开(公告)号：JPH06310496A

公开(公告)日：1994-11-04

申请号：JP7595694

申请日：1994-04-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BOKU SATOSHI ,  GU CHINKON

IPC: H01L21/31 ,  B05C11/08 ,  H01L21/027 ,  H01L21/28 ,  H01L21/316

Abstract: PURPOSE: To uniformly coat a planarizing material on the entire surface of a wafer being rotated. CONSTITUTION: During rotating of a fixing plate by the rotating force of a motor, an SOG material is coated on a wafer with feeding a thermal energy on the marginal face of the wafer. The thermal energy reduces the viscosity coefficient of the SOG material during rotating at the edge of the wafer 11 being heated by this energy and hence the surface tension near the edge reduces to thereby coat the SOG material at a uniform thickness.