Abstract:
Provided are a hybrid white organic light emitting diode (OLED) and a method of fabricating the same. A HOMO level difference between a fluorescent emission layer and an electron transport layer in an organic emission layer (OLED) becomes higher than that between the other layers or a LUMO level difference between a fluorescent emission layer and a hole transport layer is higher than that between the other layers, so that a recombination region is restricted to a part of an emission layer to obtain high-efficiency fluorescent light emission. In addition, triplet excitons that are not used in a fluorescent emission layer are transferred to an auxiliary emission layer formed to be spaced apart from a recombination region by a predetermined distance to emit light in a different color from the fluorescent emission layer, so that both singlet and triplet exicitons formed in the OLED are used to obtain high-efficiency white light emission.
Abstract:
A white organic electro luminescence device and a method for manufacturing the same are provided to acquire a white light emitting characteristic having a high purity by forming a trap light emitting layer between a hole layer and an electron layer. A white organic electro luminescence device includes a substrate(210), a first electrode(220), hole layers(230,240), a light emitting layer(250), electron layers(260,270), and a second electrode(280). The first electrode(220) is formed on the substrate(210). The hole layers(230,240) are formed on the first electrode(220). The light emitting layer(250) has a dopant and a host, and has a trap light emitting layer(255) which is formed on an upper part of the positive hole to have a difference of energy level between the dopant and the host. The electron layers(260,270) are formed on the upper part of the light emitting layer(250). The second electrode(280) is formed on the electron layers(260,270).
Abstract:
PURPOSE: A transparent conductive layer for an electrode and the preparing method thereof are provided to obtain a high light transmittance and a low surface resistance in 450~750nm. CONSTITUTION: A transparent conductive layer for an electrode includes indium tin oxide, tin oxide, and metal oxide. The metal oxide is metal(M) which consists of at least two. It is treated by a reducing process. The ionic radius ratio of untreated metal oxide and metal oxide is a range of 1.2~1.7:1.
Abstract:
PURPOSE: An indium zinc oxide sputtering target and a method for manufacturing thereof are provided to obtain a sputtering target with a low resistance by employing titanium oxide as dopant. CONSTITUTION: An indium zinc oxide sputtering target comprises indium tin oxide, zinc oxide, and titanium oxide. The titanium oxide is TiO2-a employed as dopant instead of existing TiO2, where a is 0.5-1. The TiO2-a dopant improves the degree of freedom in the crystalline of a transparent film formed from the indium zinc oxide sputtering target, thereby enhancing the etching property of the transparent film.
Abstract translation:目的:提供一种铟锌氧化物溅射靶及其制造方法,通过使用氧化钛作为掺杂剂,获得具有低电阻的溅射靶。 构成:铟锌氧化物溅射靶包括氧化铟锡,氧化锌和氧化钛。 氧化钛是用作掺杂剂而不是现有TiO 2的TiO 2,其中a为0.5-1。 TiO 2 -a掺杂剂改善了由铟锌氧化物溅射靶形成的透明膜的结晶自由度,从而提高了透明膜的蚀刻性能。