公开(公告)号：FR2728390A1

公开(公告)日：1996-06-21

申请号：FR9415630

申请日：1994-12-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SONG YOON HO ,  PARK KYUNG HO ,  NAM KEE SOO

IPC: H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L21/324

Abstract: A process for formation of a thin film transistor which can be usefully applied to a high picture quality active matrix liquid crystal display is disclosed. Particularly, a process for formation of an improved polysilicon thin film transistor is disclosed. In the process for formation of a polysilicon thin film transistor, the solid phase crystallization of a non-crystalline silicon is carried out under a high pressure oxygen atmosphere, and therefore, the solid phase crystallization time for a non-crystalline silicon is shortened so as to improve the productivity, and the grain size of the polysilicon is made more uniform so as improve the electrical characteristics of the TFT (thin film transistor).