公开(公告)号：JPH02298040A

公开(公告)日：1990-12-10

申请号：JP6952190

申请日：1990-03-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KOU JINTOKU ,  BOKU SHINSHIYOU ,  SAI HEITO

IPC: C30B19/12 ,  C30B29/42 ,  H01L21/20 ,  H01L21/338 ,  H01L29/16 ,  H01L29/778 ,  H01L29/812

Abstract: PURPOSE: To improve the doping characteristic of an HEMT by lowering the concentration of an n-type impurity due to DX centers by epitaxially growing a III- or IV-element compound semiconductor layer, in which compound semiconductors having direct and indirect forbidden bands are mixed together on a semiconductor substrate having (111B) plane orientation. CONSTITUTION: A first layer 1 composed of such a semiconductor that is not doped, and having a narrow forbidden band width is grown by using a substrate 9 having a (111B) plane orientation. Then a first semiconductor layer 1 is grown for forming a two-dimensional electron gas 4 and a second three- or four- dimensional semiconductor layer 2, which has a forbidden band width wider than that of the layer 1 and doped with an n-type impurity is grown so as to form a heterogeneous structure 3. In addition, an n-type semiconductor layer 5 is grown to improve a resistive contact. Finally, an HEMT is manufactured by forming a source electrode 6 and a drain electrode 7 on the layer 5 and a gate electrode 8, for adjusting the concentration of the electron gas 4. Therefore, the doping characteristic of the HEMT can be improved by lowering the concentration of the n-type impurity at the DX centers (deep level).