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公开(公告)号：JPH09162421A
公开(公告)日：1997-06-20
申请号：JP22534896
申请日：1996-08-27
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SEOONJIE RII , KIYONWAN PAAKU , MINCHIEORU SHIN
Abstract: PROBLEM TO BE SOLVED: To make it possible to change the resistance of a piezo-resistor by a change in a pressure by a method wherein an insulating protective film, which insulates the piezo-resistor from a conductive material film on the upper part of the protective film and at the same time, protects the resistor, is formed on the whole surface of the resistor and the surface of each one part of first and second electrodes, which are formed in connection with both ends of the resistor which is formed of an Mo-C pattern consisting of a superfine film on a substrate. SOLUTION: An Mo-C piezo-resistor 12 having a prescribed width is formed on an insulative substrate 10. First and second electrodes 13a and 13b, which are made contact with both ends of the resistor 12 and consist of a conductive metallic material film, are formed. A protective insulating film 14 consisting of such an insulator film as an Si-C film is formed on the whole surface of the resistor 12 and the surface of each one part of the electrodes 13a and 13b as a protective film for the resistor 12. As the resistor 12, an Mo-C superfine film is formed. Thereby, even in the case where a very small pressure is applied to the upper part of a pattern of the film 14, a change is generated in the distances between atoms in the resistor 12 and the resistance of the resistor itself can be changed.
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公开(公告)号：JPH09181331A
公开(公告)日：1997-07-11
申请号：JP19342396
申请日：1996-07-23
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIYONWAN PAAKU , SEOONJIE RII , MINCHIEORU SHIN
IPC: H01L29/68 , H01L21/334 , H01L29/06 , H01L29/12 , H01L29/205 , H01L29/66 , H01L29/772 , H01L29/778 , H01L29/80
Abstract: PROBLEM TO BE SOLVED: To provide a plane resonance tunnel transistor of a structure, wherein the transistor has a high negative resistance and an adjustment of a resonance tunnel current is possible by an adjustment of a gate voltage. SOLUTION: Three potential barriers are formed by applying a negative voltage to fine isolation gates 2, 4, 6, (a) and (b). Thereby, two parts of asymmetrical zero dimension regions, that is, two asymmetrical quantum points are formed. A forward voltage is applied to both terminals 18 to contrive so as to cause two times of resonance tunnel phenomenons in a sequential manner. Moreover, the height of the third potential barrier is made low. By the two times of these sequential resonance tunnel phoenomemon a and the lowering of the height of the third pottential barrier, a resonance tunnel current can be outputted at the maximum value.
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公开(公告)号：JPH09162423A
公开(公告)日：1997-06-20
申请号：JP23052396
申请日：1996-08-30
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： SEOONJIE RII , KIYONWAN PAAKU , MINCHIEORU SHIN
Abstract: PROBLEM TO BE SOLVED: To provide a side surface resonance tunnel diode, which makes two- time resonance tunnelings cause and increases a tunnel current. SOLUTION: A two-dimensional electron gas layer 35, which is formed between two semiconductor layers, is used as a current passage, a voltage is applied to this layer 35 in the vertical direction and a plurality of gate electrodes 37 to 39, which are respectively formed with a potential barrier, are provided. The potential barrier, through which electrons are lastly made to pass, is formed so that the potential energy level of the potential barrier is lower than those of the other barriers. Thereby, as primary and secondary resonance tunnel currents are easily tunneled through the last potential barrier at the potential energy level of the last potential barrier, a tunneling of a current is increased in a side surface resonance tunnel diode and it is possible to apply the side surface resonance tunnel diode to a switching element, a high-frequency oscillation element and an amplifying element.
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