Laser having reduced impact of parasitic etalon

    公开(公告)号:JP2004356504A

    公开(公告)日:2004-12-16

    申请号:JP2003154390

    申请日:2003-05-30

    Abstract: PROBLEM TO BE SOLVED: To improve a performance of a laser by approximately matching spectral periods of a plurality of etalons existing in a laser cavity.
    SOLUTION: A discrete-tunable-external-cavity semiconductor laser having a fixed grid etalon 16 in the laser cavity 21 with a free spectral region (FSR) of the etalon 16 being the integer times of the FSR of the cavity 21 and with the integer times of the FSR of a chip parasitic etalon caused by the face 12-1, 12-2 of a semiconductor gain element 10 is provided. A fixed wavelength external cavity semiconductor laser having the FSR of the chip etalon being the integer times of that of the cavity 21 and the FSR of a mode suppressing etalon 16' which is inserted is the cavity 21 being the integer times of the FSR of the chip etalon.
    COPYRIGHT: (C)2005,JPO&NCIPI

    External cavity laser with its single mode operation improved

    公开(公告)号:JP2004356505A

    公开(公告)日:2004-12-16

    申请号:JP2003154391

    申请日:2003-05-30

    Abstract: PROBLEM TO BE SOLVED: To aquire a stable single mode operation of an external cavity semiconductor laser. SOLUTION: The stable single mode operation of the external cavity semiconductor laser with a laser controlling method for monitoring at least one optical beam generated by a reflection from a wavelength selecting factor in the laser cavity is acquired. In the method of this invention, a signal acquired by the reflection from the wavelength selecting factor in the laser cavity clearly specifies a mode hop generated immediately after to provide the stable single mode opration, which drastically decreases the number of mode hops. COPYRIGHT: (C)2005,JPO&NCIPI

    Device and method for determining wavelength by coarse and fine measurements

    公开(公告)号:JP2004191349A

    公开(公告)日:2004-07-08

    申请号:JP2003154389

    申请日:2003-05-30

    CPC classification number: G01J9/0246

    Abstract: PROBLEM TO BE SOLVED: To provide a device and a method which determine an absolute wavelength of an optical signal by the following process, a determination of a coarse wavelength response and a fine wavelength response is made, then, the absolute wavelength is obtained by combining the above two wavelength responses.
    SOLUTION: This device determines the wavelength of the optical signal from the coarse wavelength response and the fine wavelength response. The coarse wavelength response is obtained by an optical filter. An appropriate detector detects the response of a wavelength dependency and transmits it to a processing logic. The fine wavelength response is sensed by using an interferometer which can make an interference pattern. The two detectors are set transversely with a distance within the interference pattern and detect an intensity response at each position. The intensity response is transmitted to a unit which determines the fine wavelength response. Finally, the wavelength is determined in the processing logic by using the determined coarse wavelength response and fine wavelength response.
    COPYRIGHT: (C)2004,JPO&NCIPI

    Improved multipass second harmonic generation
    7.
    发明专利
    Improved multipass second harmonic generation 审中-公开
    改进的多次二次谐波发生

    公开(公告)号:JP2004226987A

    公开(公告)日:2004-08-12

    申请号:JP2004013663

    申请日:2004-01-21

    Abstract: PROBLEM TO BE SOLVED: To improve an apparatus and method with which the adjustment of the relative phases of a pumping beam and second harmonic beam in multipass SHG. SOLUTION: The improved multipass second harmonic generation (SHG) is provided by using an inverting and self-imaging telescope. The embodiment ensures the parallel structure of all the passes of all beams within a nonlinear medium. According to another embodiment, the improved multipass SHG is provided by using a wedged phaser. The relative phases of a pump beam and second harmonic beam between the passes can be easily adjusted by such structure. Further, in another embodiment, the improved type mutlipass SHG is provided by using the inverting and self-imaging telescope in combination with the wedged phaser. The relative phases of the pump beam and the second harmonic beam between the passes can be adjusted by such structure and the parallel structure of all the paths of all beams can be assured within the nonlinear medium. The structure also allows the corresponding passes of the pump beam and the second harmonic beam to be made collinear within the nonlinear medium by design. COPYRIGHT: (C)2004,JPO&NCIPI

    Abstract translation: 要解决的问题:改进在多通道SHG中调节泵浦光束和二次谐波光束的相对相位的装置和方法。 解决方案:改进的多次谐波二次谐波产生(SHG)是通过使用反相和自成像望远镜来提供的。 该实施例确保了非线性介质内所有波束的所有通路的并行结构。 根据另一个实施例,通过使用楔形移相器来提供改进的多通道SHG。 可以通过这种结构容易地调整通道之间的泵浦光束和二次谐波光束的相对相位。 此外,在另一实施例中,通过使用反相和自成像望远镜与楔形移相器相结合来提供改进型多功能滑翔机SHG。 可以通过这种结构来调节泵浦光束和通道之间的二次谐波光束的相对相位,并且可以在非线性介质内确保所有光束的所有光束的所有路径的并联结构。 该结构还允许泵浦光束和第二谐波光束的相应通过设计在非线性介质内共线。 版权所有(C)2004,JPO&NCIPI

    Laser reduced in influence of parasitic etalon

    公开(公告)号:JP2004186669A

    公开(公告)日:2004-07-02

    申请号:JP2003308810

    申请日:2003-09-01

    CPC classification number: H01S5/141 H01S3/1068 H01S5/0654 H01S2301/02

    Abstract: PROBLEM TO BE SOLVED: To improve laser performance by bringing the spectral cycles of a plurality of etalons disposed in the laser cavity into practical coincidence.
    SOLUTION: This is to provide discrete tunable external cavity semiconductor laser that has grid fixed etalon within the laser cavity, wherein a free spectral region (FSR) of the grid fixed etalon is an integral multiple of the laser cavity's FSR, and is an integral multiple of the chip etalon's FSR. Further, there is provided fixed wavelength external cavity semiconductor laser in which the chip etalon's FSR is an integral multiple of the laser cavity's FSR, mode controlled etalon's FSR is inserted into the laser cavity, and the mode controlled etalon's FSR is an integral multiple of the chip etalon's FSR. Furthermore, there are provided tunable external cavity semiconductor laser in which the chip etalon's FSR is an integral multiple of the laser cavity's FSR, and fixed wavelength external cavity semiconductor laser in which the chip etalon's FSR is an integral multiple of the laser cavity's FSR.
    COPYRIGHT: (C)2004,JPO&NCIPI

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