公开(公告)号：US20240071712A1

公开(公告)日：2024-02-29

申请号：US18226644

申请日：2023-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SeungWan YOO ,  Jeongyeon LEE ,  Dohyung KIM ,  Jaehong PARK ,  Dong-Chan LIM

IPC: H01J37/20 ,  H01J37/317

CPC classification number: H01J37/20 ,  H01J37/3178 ,  H01J2237/201 ,  H01J2237/20214

Abstract: An ion beam deposition method includes placing a substrate into an ion beam deposition apparatus, irradiating an ion beam from an ion beam source toward a target plate, and rotating the target plate during the irradiating of the ion beam. The target plate includes a first region that includes a first material, and a second region that includes a second material different from the first material.

公开(公告)号：US20240062996A1

公开(公告)日：2024-02-22

申请号：US18234123

申请日：2023-08-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SeungWan YOO ,  Jeongyeon LEE ,  Dohyung KIM ,  Jaehong PARK ,  Dong-Chan LIM

IPC: H01J37/32 ,  C23C14/34

CPC classification number: H01J37/32697 ,  H01J37/3211 ,  C23C14/3442 ,  H01J37/34

Abstract: An ion beam source including a plasma chamber including a plasma generating space, a plasma generator configured to generate plasma in the plasma generating space, a first grid connected to the plasma chamber, a second grid connected to the plasma chamber, and a first grid driver connected to the first grid. The first grid driver may be configured to move the first grid relative to the second grid.