公开(公告)号：US20160099387A1

公开(公告)日：2016-04-07

申请号：US14718252

申请日：2015-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tsuyoshi TSUTSUI ,  Jong Cheol KIM ,  Il Woo PARK ,  Jin Hyun LEE

IPC: H01L33/50 ,  H01L33/60

CPC classification number: H01L33/502 ,  H01L24/97 ,  H01L33/0095 ,  H01L33/18 ,  H01L33/24 ,  H01L33/505 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor light emitting device includes a package body having first and second surfaces being opposed to each other, first and second external terminal blocks disposed in opposite end portions of the package body, respectively, and having portions exposed to surfaces of the package body, respectively. A wavelength converting material layer is disposed between the first and second external terminal blocks and has a first surface substantially coplanar with the first surface of the package body, and a second surface opposing the first surface of the wavelength converting material layer. A LED chip is disposed package body on at least a portion of the second surface of the wavelength converting material layer between the first and second external terminal blocks within the package body.

Abstract translation: 一种半导体发光器件包括具有彼此相对的第一和第二表面的封装体，分别设置在封装体的相对端部的第一和第二外部端子块，并且具有分别暴露于封装主体的表面的部分 。 波长转换材料层设置在第一和第二外部端子块之间，并且具有与封装主体的第一表面基本共面的第一表面和与波长转换材料层的第一表面相对的第二表面。 LED芯片在封装主体内的第一和第二外部端子块之间的波长转换材料层的第二表面的至少一部分上设置在封装体上。

公开(公告)号：US20140106483A1

公开(公告)日：2014-04-17

申请号：US14109420

申请日：2013-12-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Bock LEE ,  Jin Hyun LEE ,  Hee Seok PARK ,  Pun Jae CHOI ,  Jong In YANG

IPC: H01L33/62

CPC classification number: H01L33/62 ,  H01L21/268 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.

Abstract translation: 提供了包括第一电极的垂直氮化物基LED; 设置在所述第一电极上的第一氮化物半导体层; 设置在所述第一氮化物半导体层上的有源层; 设置在所述有源层上的第二氮化物半导体层; 设置在所述第二氮化物半导体层上的欧姆接触图案; 设置在所述欧姆接触图案上的第二电极; 以及与第二电极电连接并设置在第二氮化物半导体层上的接合焊盘。

公开(公告)号：US20140008665A1

公开(公告)日：2014-01-09

申请号：US13933887

申请日：2013-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su Hyun JO ,  Jong Ho LEE ,  Jin Hyun LEE ,  Chan Mook LIM ,  Jin Hwan KIM

IPC: H01L27/15 ,  H01L33/00

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/005 ,  H01L33/20 ,  H01L2933/0016

Abstract: A method of manufacturing a semiconductor light emitting device having a multi-cell array, including: sequentially forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a substrate; etching and removing portions of the second conductive semiconductor layer and the active layer so as to expose portions of an upper surface of the first conductive semiconductor layer corresponding to respective regions of the second conductive semiconductor layer spaced apart from one another; and separating light emitting cells by partially etching the exposed portions of the first conductive semiconductor layer, wherein the separating of the light emitting cells is not performed at an edge portion of the substrate.

Abstract translation: 一种制造具有多单元阵列的半导体发光器件的方法，包括：在衬底上依次形成第一导电半导体层，有源层和第二导电半导体层; 蚀刻和去除所述第二导电半导体层和所述有源层的部分，以便暴露所述第一导电半导体层的与所述第二导电半导体层彼此间隔开的相应区域的上表面的部分; 以及通过部分蚀刻所述第一导电半导体层的暴露部分来分离发光单元，其中在所述基板的边缘部分处不发生所述发光单元的分离。

公开(公告)号：US20140312369A1

公开(公告)日：2014-10-23

申请号：US14146689

申请日：2014-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Heon YOON ,  Sang Yeon KIM ,  Seung Hwan LEE ,  Jin Hyun LEE ,  Wan Tae LIM ,  Hyun Kwon HONG

IPC: H01L33/36

CPC classification number: H01L33/382 ,  H01L33/20 ,  H01L33/22 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/13 ,  H01L2933/0016

Abstract: A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.

Abstract translation: 一种半导体发光器件，包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 连接到第一导电类型半导体层的第一电极; 第二电极，包括连接到第二导电类型半导体层的接触层，设置在接触层上的覆盖层和设置在覆盖层上的金属缓冲层，金属缓冲层包围覆盖层的上表面和侧表面 ; 设置在所述发光结构上以使得所述第一和第二电极露出的第一绝缘层; 以及设置在所述第一绝缘层上的第二绝缘层，使得所述第一电极的至少一部分和所述金属缓冲层的至少一部分露出。

公开(公告)号：US20140097458A1

公开(公告)日：2014-04-10

申请号：US14101242

申请日：2013-12-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Pun Jae . CHOI ,  Jin Hyun LEE ,  Ki Yeol PARK ,  Myong Soo CHO

IPC: H01L33/38 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Abstract translation: 提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。 一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层 在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘 和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。