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    1.
    发明专利
    未知

    公开(公告)号：NO995731L

    公开(公告)日：2000-01-21

    申请号：NO995731

    申请日：1999-11-22

    Applicant: SEXTANT AVIONIQUE

    Inventor： LEFORT OLIVIER ,  THOMAS ISABELLE

    IPC: B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/00 ,  G01P15/02 ,  G01L1/04

    Abstract: A process for the production of microsensors machined in silicon, and in particular accelerometers for applications of assisting with navigation in aircraft, and pressure sensors. In order to improve the production of certain active parts of the sensor, and in particular of a beam forming a resonator, which needs to have well-controlled width and thickness characteristics, the following procedure is adopted. A beam having a thickness equal to the desired final thickness, and a width greater than the desired final width, is produced by micromachining the silicon on a first plate, the beam being covered on its upper face by a mask defining the desired final width. The plate is assembled with another plate. The two faces of the beam are oxidized in order to cover them with a thin protective layer. The thin protective layer on the upper face is removed, by vertical directional etching, without removing the mask already present. The silicon in the area exposed by the preceding operation is attacked by a vertical directional etch on the upper face, until the entire part of the beam not protected by the mask is eliminated, and the beam having the desired width is thus formed.

    6.
    发明专利
    未知

    公开(公告)号：DE69305880D1

    公开(公告)日：1996-12-19

    申请号：DE69305880

    申请日：1993-02-16

    Applicant: SEXTANT AVIONIQUE

    Inventor： THOMAS ISABELLE ,  LEFORT PIERRE-OLIVIER

    IPC: G01L9/00

    Abstract: The present invention relates to a pressure microsensor consisting of a stack of three silicon wafers in contact, by their periphery, with the interposition of an insulating layer to define an internal cavity. The lower wafer (2) comprises a thinned region (21) forming a diaphragm, on the side of its inner face. The central wafer (1) comprises a peripheral region (11) forming a frame which is solidly attached to the upper and lower wafers by means of a silicon oxide layer (24, 25), a first contact area (13) mounted on the thinned region of the lower wafer, a second contact area (14) mounted on a thick region of the lower wafer, and a silicon reed (blade) (15) forming a resonator arranged between the upper faces of the first and second contact areas opposite the upper wafer (3). A first electrode (32) is connected to the upper wafer, a second electrode (33) to the frame and a third electrode (31) to the second contact area. … …

    9.
    发明专利
    未知

    公开(公告)号：FR2687783B1

    公开(公告)日：1994-05-20

    申请号：FR9202189

    申请日：1992-02-20

    Applicant: SEXTANT AVIONIQUE

    Inventor： THOMAS ISABELLE ,  LEFORT PIERRE OLIVIER

    IPC: G01L9/00 ,  G01L9/12 ,  G01L23/12 ,  G01D5/24 ,  H01L21/302 ,  H01L49/00

    Abstract: The present invention relates to a pressure microsensor consisting of a stack of three silicon wafers in contact, by their periphery, with the interposition of an insulating layer to define an internal cavity. The lower wafer (2) comprises a thinned region (21) forming a diaphragm, on the side of its inner face. The central wafer (1) comprises a peripheral region (11) forming a frame which is solidly attached to the upper and lower wafers by means of a silicon oxide layer (24, 25), a first contact area (13) mounted on the thinned region of the lower wafer, a second contact area (14) mounted on a thick region of the lower wafer, and a silicon reed (blade) (15) forming a resonator arranged between the upper faces of the first and second contact areas opposite the upper wafer (3). A first electrode (32) is connected to the upper wafer, a second electrode (33) to the frame and a third electrode (31) to the second contact area. … …

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