公开(公告)号：WO2015040825A2

公开(公告)日：2015-03-26

申请号：PCT/JP2014004647

申请日：2014-09-10

Applicant: SONY CORP

Inventor： TODA ATSUSHI

IPC: G02B3/04

CPC classification number: G02B27/0025 ,  G02B3/04 ,  G02B3/12 ,  G02B3/14 ,  G02B13/18 ,  G02B26/004 ,  G02B2003/0093 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14627 ,  H01L2924/0002 ,  H04N5/3572 ,  H04N2209/047 ,  H01L2924/00

Abstract: An imaging device includes: a photoelectric conversion unit; and a correction unit that corrects the angle of light incident on the photoelectric conversion unit, the correction unit being located on the side of the light incident on the photoelectric conversion unit. The correction unit has a curved surface, and the surface shape of the curved surface is a spherical surface. The surface shape is a shape according to a predetermined equation involving the radius of the spherical surface, the distance from the center of the optical axis of the imaging plane to the edge of the imaging plane, and the refractive index of the material forming the correction unit.

Abstract translation: 一种成像装置包括：光电转换单元; 以及校正单元，校正入射在光电转换单元上的光的角度，校正单元位于入射在光电转换单元上的光的一侧。 校正单元具有曲面，并且曲面的表面形状是球面。 表面形状是根据涉及球面的半径，从成像面的光轴的中心到成像面的边缘的距离以及形成校正的材料的折射率的预定方程的形状 单元。

公开(公告)号：EP1455224A4

公开(公告)日：2007-11-07

申请号：EP02708663

申请日：2002-03-26

Applicant: SONY CORP

Inventor： TODA ATSUSHI ,  KUROKI YOSHIHIKO ,  OHNISHI MICHIHIRO ,  AKAO HIROTAKA ,  ISHIMOTO KO

IPC: G03B21/56 ,  G03B21/00 ,  G03B21/60

CPC classification number: G03B21/567 ,  B82Y20/00 ,  G02B1/005 ,  G02B5/003 ,  G02B5/26 ,  G02F2201/50 ,  G02F2202/32 ,  G03B21/56 ,  G03B21/60

Abstract: A projection screen constituted by forming a fine particle layer for reflecting red color, a fine particle layer for reflecting green color, and a fine particle layer for reflecting blue color sequentially, in layer, on a substrate. In each fine particle layer, fine particles are laid regularly by 11 periods in tightest structure, for example. The fine particle for reflecting red color has diameter of about 280 nm, the fine particle for reflecting green color has diameter of about 235 nm, and the fine particle for reflecting blue color has diameter of about 212 nm. Each fine particle layer is deposited by a self-organizing technology. Such a substrate as can absorb light other than three primary colors of red, green and blue is employed.

公开(公告)号：DE69419583T2

公开(公告)日：2000-01-20

申请号：DE69419583

申请日：1994-11-04

Applicant: SONY CORP

Inventor： TODA ATSUSHI ,  ASANO TAKEHARU

IPC: C23C16/30 ,  C30B25/02 ,  H01L21/205 ,  H01L21/365 ,  H01L33/00 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00

Abstract: A metal-organic chemical vapor-phase deposition process for fabricating a layer of a Group II-VI compound semiconductor using an organometallic compound based on bis(cyclopentadienyl)magnesium having a vapor pressure in the range of from 1.3 x 10 Pa to 1.3 x 10 Pa at a temperature of 330 DEG K. The present invention also provides a light-emitting device which is fabricated by means of the metal-organic vapor-phase deposition process above. The process according to the present invention provides a magnesium-containing compound semiconductor layer having an accurately controlled composition, and it readily enables the fabrication of a compound semiconductor layer having a grated structure.

公开(公告)号：DE69431365D1

公开(公告)日：2002-10-17

申请号：DE69431365

申请日：1994-11-04

Applicant: SONY CORP

Inventor： TODA ATSUSHI ,  ASANO TAKEHARU

IPC: C23C16/30 ,  C30B25/02 ,  H01L21/205 ,  H01L21/365 ,  H01L33/00 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00

Abstract: A metal-organic chemical vapor-phase deposition process for fabricating a layer of a Group II-VI compound semiconductor using an organometallic compound based on bis(cyclopentadienyl)magnesium having a vapor pressure in the range of from 1.3 x 10 Pa to 1.3 x 10 Pa at a temperature of 330 DEG K. The present invention also provides a light-emitting device which is fabricated by means of the metal-organic vapor-phase deposition process above. The process according to the present invention provides a magnesium-containing compound semiconductor layer having an accurately controlled composition, and it readily enables the fabrication of a compound semiconductor layer having a grated structure.

公开(公告)号：AU2002242969A1

公开(公告)日：2003-06-23

申请号：AU2002242969

申请日：2002-03-26

Applicant: SONY CORP

Inventor： TODA ATSUSHI ,  KUROKI YOSHIHIKO ,  OHNISHI MICHIHIRO ,  AKAO HIROTAKA ,  ISHIMOTO KO

IPC: G03B21/56 ,  G03B21/00 ,  G03B21/60

Abstract: A projection screen comprises a red-reflecting particle layer, green-reflecting particle layer and blue-reflecting particle layer sequentially stacked on a substrate. In each particle layer, particles are accumulated by eleven cycles in a regularly alignment such as close-packed structure. Diameter of red-reflecting particles is approximately 280 nm, diameter of green-reflecting particles is approximately 235 nm, and diameter of blue-reflecting particles is approximately 212 nm. Each particles layer is accumulated by self-organized technique. The substrate used here can absorb light of wavelengths other than those of red, green and blue three primary colors.

公开(公告)号：DE69419583D1

公开(公告)日：1999-08-26

申请号：DE69419583

申请日：1994-11-04

Applicant: SONY CORP

Inventor： TODA ATSUSHI ,  ASANO TAKEHARU

IPC: C23C16/30 ,  C30B25/02 ,  H01L21/205 ,  H01L21/365 ,  H01L33/00 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00

Abstract: A metal-organic chemical vapor-phase deposition process for fabricating a layer of a Group II-VI compound semiconductor using an organometallic compound based on bis(cyclopentadienyl)magnesium having a vapor pressure in the range of from 1.3 x 10 Pa to 1.3 x 10 Pa at a temperature of 330 DEG K. The present invention also provides a light-emitting device which is fabricated by means of the metal-organic vapor-phase deposition process above. The process according to the present invention provides a magnesium-containing compound semiconductor layer having an accurately controlled composition, and it readily enables the fabrication of a compound semiconductor layer having a grated structure.

公开(公告)号：JP2015056417A

公开(公告)日：2015-03-23

申请号：JP2013186980

申请日：2013-09-10

Applicant: ソニー株式会社 ,  Sony Corp

Inventor： HATANO KEISUKE ,  TODA ATSUSHI

IPC: H01L27/14 ,  H04N5/369

CPC classification number: H01L27/14629 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

Abstract: 【課題】感度を向上させる。【解決手段】光入射面と反対側の半導体基板面に、入射された光を光電変換部に反射させる反射部を備え、反射部は、反射板と金属配線により構成され、金属配線は、第1の膜厚と、第1の膜厚よりも薄い膜厚の第2の膜厚を有する形状である。金属配線同士が隣接する部分には、少なくとも一方の金属配線の第2の膜厚の部分が位置する。また反射板は、第1の膜厚と同一の膜厚で構成され、金属配線と反射板が隣接する部分には、金属配線の第2の膜厚の部分が位置する。本技術は、撮像装置に適用できる。【選択図】図1

Abstract translation: 要解决的问题：提供能够提高感光度的成像装置。解决方案：成像装置具有用于将入射光反射到光电转换部分的反射部分，该光电转换部分形成在与光学入射相反的半导体基板的表面上 飞机 反射部分包括反射器和金属布线。 金属布线包括具有第一膜厚度的金属布线和具有比第一膜厚度薄的第二膜厚度的金属布线。 在金属布线彼此相邻的部分处，一个金属布线的第二膜厚度的至少一部分被定位。 反射器形成为与第一膜厚度相同的膜厚度。 在金属布线和反射体彼此相邻的部分中，定位第二膜厚度的金属布线的一部分。 成像装置适用于成像装置。

公开(公告)号：JP2014053429A

公开(公告)日：2014-03-20

申请号：JP2012196439

申请日：2012-09-06

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TODA ATSUSHI

IPC: H01L27/14 ,  G09F9/00 ,  H01L27/146 ,  H04N5/369

CPC classification number: F21V7/10 ,  G01J1/0204 ,  G01J1/0414 ,  G01J1/0422 ,  H01L27/14629 ,  H01L27/14647 ,  H01L27/32 ,  H01L31/0232 ,  H01L51/5271 ,  H05B33/22

Abstract: PROBLEM TO BE SOLVED: To provide a solid state image pick-up device having a reflector which can enhance sensitivity or utilization efficiency of light by reflecting incident light, while suppressing color mixture.SOLUTION: A solid state image pick-up device includes a photoelectric conversion unit, and a reflector including a first portion provided on the side opposite from the light incident side and formed in the center of a condensing region, and a second portion formed on the boundary to the adjoining region and formed convexly for the first portion on the incident side, and condensing the reflection light in the region by generating a phase difference between the reflection light by the first portion and the reflection light by the second portion.

Abstract translation: 要解决的问题：提供一种具有反射器的固态摄像装置，其可以通过反射入射光来提高光的灵敏度或利用效率，同时抑制混色。解决方案：固态摄像装置包括光电 转换单元，以及反射器，包括设置在与光入射侧相反的一侧并形成在聚光区域的中心的第一部分，以及形成在邻接区域的边界上的第二部分，并且形成为凸起地用于第一部分 并且通过产生第一部分的反射光与第二部分的反射光之间的相位差来聚集该区域中的反射光。

公开(公告)号：JP2013037165A

公开(公告)日：2013-02-21

申请号：JP2011172745

申请日：2011-08-08

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TODA ATSUSHI ,  HIRAYAMA TERUO

IPC: G02F1/13357 ,  F21S2/00 ,  F21Y101/02

CPC classification number: G02F1/133615 ,  G02F1/133617 ,  G02F2202/102 ,  G02F2202/106 ,  G02F2202/107 ,  G02F2202/108

Abstract: PROBLEM TO BE SOLVED: To provide a display device etc. which can facilitate improving light utilization efficiency.SOLUTION: A display device includes: a light source section that emits excitation light for each pixel; and a light emitting layer that includes a quantum dot and emits emission light for each of the pixels. The quantum dot generates, based on the excitation light, the emission light having a wavelength longer than a wavelength of the excitation light. The wavelength conversion from the excitation light to the emission light is performed with a simple configuration.

Abstract translation: 解决的问题：提供一种能够提高光利用效率的显示装置等。 解决方案：显示装置包括：对每个像素发射激发光的光源部分; 以及包括量子点并发射每个像素的发射光的发光层。 量子点基于激发光产生具有比激发光的波长长的波长的发射光。 以简单的结构进行从激发光到发光的波长转换。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2011259492A

公开(公告)日：2011-12-22

申请号：JP2011177101

申请日：2011-08-12

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OIKE YUSUKE ,  TODA ATSUSHI

IPC: H04N5/355 ,  H01L27/146 ,  H04N5/353 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378

Abstract: PROBLEM TO BE SOLVED: To enable signals to be linearly acquired with high S/N without narrowing a normal saturation level under low illumination, and widen a dynamic range while achieving fine S/N in a linear region even for incident light at the normal saturation level or higher.SOLUTION: In a CMOS image sensor 10 where unit pixels 20 each including a photodiode 21 and a transfer transistor 22 for transferring signal electric charges photoelectrically converted by the photodiode 21, are two-dimensionally arranged in a matrix form, a supply voltage control circuit 13 sequentially supplies a control electrode of the transfer transistor 22 with plural control voltages, and at this time, a vertical scanning circuit 12 partially transfers the signal electric charges twice or more and drives the unit pixel to independently read out voltage according to the electric charges after the second or later partial transfers.

Abstract translation: 要解决的问题：为了使信号能够以高S / N线性地获取，而在低照度下不会使正常饱和电平变窄，并且即使对于入射光在线性区域也能在线性区域中实现精细的S / N，也可以扩大动态范围 正常饱和度或更高。 解决方案：在CMOS图像传感器10中，每个包括用于传输由光电二极管21光电转换的信号电荷的光电二极管21和转移晶体管22的单位像素20以矩阵形式二维排列，电源电压 控制电路13依次向转印晶体管22的控制电极提供多个控制电压，此时，垂直扫描电路12将信号电荷部分地转移两次以上，驱动单位像素，根据 第二次或以后部分转移后的电费。 版权所有（C）2012，JPO＆INPIT